生命周期: | Contact Manufacturer | 包装说明: | BGA-60 |
Reach Compliance Code: | unknown | 风险等级: | 5.69 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 5 ns |
其他特性: | AUTO/SELF REFRESH | 最大时钟频率 (fCLK): | 200 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 2,4,8,16 |
JESD-30 代码: | R-PBGA-B60 | 长度: | 13 mm |
内存密度: | 134217728 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 60 |
字数: | 8388608 words | 字数代码: | 8000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 8MX16 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VBGA | 封装等效代码: | BGA60,6X12,40/32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, VERY THIN PROFILE |
刷新周期: | 4096 | 反向引出线: | NO |
座面最大高度: | 1 mm | 自我刷新: | YES |
连续突发长度: | 2,4,8,16 | 最小待机电流: | 1.7 V |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M53D128168A-5BIG2E | ESMT |
获取价格 |
DDR DRAM, 8MX16, 5ns, CMOS, PBGA60, BGA-60 | |
M53D128168A-6BG2E | ESMT |
获取价格 |
DDR DRAM, 8MX16, 5.5ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, | |
M53D128168A-6BIG2E | ESMT |
获取价格 |
DDR DRAM, 8MX16, 5.5ns, CMOS, PBGA60, BGA-60 | |
M53D128168A-7.5BAG | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Mobile DDR SDRAM | |
M53D128168A-7.5BAIG | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Mobile DDR SDRAM | |
M53D128168A-7.5BG | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Mobile DDR SDRAM | |
M53D128168A-7.5BG2E | ESMT |
获取价格 |
DDR DRAM, 8MX16, 6ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, B | |
M53D128168A-7.5BIG2E | ESMT |
获取价格 |
DDR DRAM, 8MX16, 6ns, CMOS, PBGA60, BGA-60 | |
M53D128324A-7.5BG2E | ESMT |
获取价格 |
DDR DRAM, 4MX32, 6ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, | |
M53D1G1664A | ESMT |
获取价格 |
16M x16 Bit x 4 Banks Mobile DDR SDRAM |