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M52S32321A-6BG PDF预览

M52S32321A-6BG

更新时间: 2024-11-18 05:46:55
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器
页数 文件大小 规格书
29页 798K
描述
512K x 32Bit x 2Banks Synchronous DRAM

M52S32321A-6BG 数据手册

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ESMT  
M52S32321A  
SDRAM  
512K x 32Bit x 2Banks  
Synchronous DRAM  
FEATURES  
GENERAL DESCRIPTION  
The M52S32321A is 33,554,432 bits synchronous high data  
rate Dynamic RAM organized as 2 x 524,288 words by 32 bits,  
fabricated with high performance CMOS technology.  
Synchronous design allows precise cycle control with the use of  
system clock I/O transactions are possible on every clock cycle.  
Range of operating frequencies, programmable burst length and  
programmable latencies allow the same device to be useful for  
a variety of high bandwidth, high performance memory system  
applications.  
z
z
z
z
2.5V power supply  
LVCMOS compatible with multiplexed address  
Dual banks operation  
MRS cycle with address key programs  
-
-
-
CAS Latency (1, 2 & 3 )  
Burst Length (1, 2, 4, 8 & full page)  
Burst Type (Sequential & Interleave)  
z
z
EMRS cycle with address key programs.  
All inputs are sampled at the positive going edge of the  
system clock  
z
z
Burst Read Single-bit Write operation  
Special Function Support.  
ORDERING INFORMATION  
-
-
-
PASR (Partial Array Self Refresh )  
TCSR (Temperature compensated Self Refresh)  
DS (Driver Strength)  
Max  
Freq.  
Product ID  
Package  
Comments  
M52S32321A -10BG  
100MHz 90 Ball BGA  
Pb-free  
Pb-free  
Pb-free  
z
z
z
DQM for masking  
Auto & self refresh  
64ms refresh period (4K cycle)  
M52S32321A -7.5BG 133MHz 90 Ball BGA  
M52S32321A -6BG 166MHz 90 Ball BGA  
PIN CONFIGURATION (TOP VIEW)  
90 Ball BGA  
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
DQ26 DQ24 VSS  
DQ28 VDDQ VSSQ  
VSSQ DQ27 DQ25  
VSSQ DQ29 DQ30  
VDDQ DQ31 NC  
VSS DQM3 A3  
VDD DQ23 DQ21  
VDDQ VSSQ DQ19  
DQ22 DQ20 VDDQ  
DQ17 DQ18 VDDQ  
NC DQ16 VSSQ  
A2 DQM2 VDD  
G
H
J
A4  
A7  
A5  
A8  
A6  
NC  
A9  
A10  
NC  
A0  
NC  
CS  
WE  
A1  
NC  
CLK CKE  
DQM1 NC  
BA  
RAS  
DQM0  
K
L
NC  
CAS  
VDDQ DQ8 VSS  
VSSQ DQ10 DQ9  
VSSQ DQ12 DQ14  
DQ11 VDDQ VSSQ  
DQ13 DQ15 VSS  
VDD DQ7 VSSQ  
DQ6 DQ5 VDDQ  
DQ1 DQ3 VDDQ  
VDDQ VSSQ DQ4  
VDD DQ0 DQ2  
M
N
P
R
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2009  
Revision : 1.5 1/29  

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