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M52L64164A-6BIG PDF预览

M52L64164A-6BIG

更新时间: 2024-02-13 01:06:36
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器
页数 文件大小 规格书
47页 1270K
描述
1M x 16 Bit x 4 Banks Synchronous DRAM

M52L64164A-6BIG 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Base Number Matches:1

M52L64164A-6BIG 数据手册

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ESMT  
M52L64164A  
Operation Temperature Condition -40~85°C  
Mobile SDRAM  
1M x 16 Bit x 4 Banks  
Synchronous DRAM  
FEATURES  
ORDERING INFORMATION  
y
y
y
y
3.3V power supply  
LVTTL compatible with multiplexed address  
Four banks operation  
MRS cycle with address key programs  
- CAS Latency (2 & 3)  
- Burst Length (1, 2, 4, 8 & full page)  
- Burst Type (Sequential & Interleave)  
EMRS cycle with address  
MAX  
PRODUCT NO.  
PACKAGE Comments  
FREQ.  
M52L64164A-6TIG  
M52 L64164A-7TIG  
166MHz 54 Pin TSOP II  
143MHz 54 Pin TSOP II  
Pb-free  
Pb-free  
y
y
M52L64164A-6BIG  
M52L64164A-7BIG  
166MHz 54 Ball BGA  
143MHz 54 Ball BGA  
Pb-free  
Pb-free  
All inputs are sampled at the positive going edge of the  
system clock  
y
Special function support  
-
-
-
PASR (Partial Array Self Refresh)  
TCSR (Temperature Compensated Self Refresh)  
DS (Driver Strength)  
y
y
y
DQM for masking  
Auto & self refresh  
64ms refresh period (4K cycle)  
GENERAL DESCRIPTION  
The M52L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by  
16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  
every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same  
device to be useful for a variety of high bandwidth, high performance memory system applications.  
PIN ASSIGNMENT (Top View)  
VDD  
DQ0  
VDDQ  
DQ1  
DQ2  
VSSQ  
DQ3  
DQ4  
VDDQ  
1
2
3
4
5
6
7
8
9
54  
53 DQ15  
52  
VSS  
1
2
3
4
5
6
7
8
9
VSSQ  
VDDQ  
DQ0  
VDD  
A
B
C
D
E
F
VSS  
DQ15  
VSSQ  
51 DQ14  
50 DQ13  
VDDQ  
VSSQ  
VSSQ  
VDDQ  
DQ2  
DQ4  
DQ1  
DQ3  
DQ14  
DQ12  
DQ13  
DQ11  
49  
48  
VDDQ  
DQ12  
47 DQ11  
46  
VSSQ  
VSSQ  
VDD  
DQ6  
DQ10  
DQ8  
DQ9  
NC  
VDDQ  
VSS  
DQ5  
DQ7  
45 DQ10  
44 DQ9  
DQ5 10  
DQ6 11  
LDQM  
43  
42 DQ8  
41  
VDDQ  
VSSQ  
12  
DQ7 13  
14  
VSS  
VDD  
UDQM  
NC  
CLK  
A11  
CKE  
A9  
CAS  
BA0  
RAS  
BA1  
WE  
CS  
LDQM 15  
WE 16  
40 NC  
39 UDQM  
38 CLK  
37 CKE  
36 NC  
G
H
J
CAS 17  
RAS 18  
CS 19  
A8  
A0  
A3  
A10  
A7  
A5  
A6  
A4  
A1  
A2  
35  
34  
33  
32  
31  
30  
29  
28  
A11  
A9  
BA0 20  
BA1 21  
A10/AP 22  
VSS  
VDD  
A8  
A0  
A1  
23  
24  
25  
26  
27  
A7  
A6  
A2  
A5  
A4  
A3  
VDD  
VSS  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Sep. 2008  
Revision: 1.1 1/47  

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