Datasheet > M52D64164A

M52D64164A

更新时间： 2024-11-28 05:46:55

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器手机
页数	文件大小	规格书
48页	1286K
描述
1M x 16 Bit x 4 Banks Mobile Synchronous DRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

M52D64164A 数据手册

ESMT

Mobile SDRAM

M52D64164A

1M x 16 Bit x 4 Banks

Mobile Synchronous DRAM

FEATURES

ORDERING INFORMATION

1.8V power supply

LVTTL compatible with multiplexed address

Four banks operation

MRS cycle with address key programs

- CAS Latency (2 & 3)

- Burst Length (1, 2, 4, 8 & full page)

- Burst Type (Sequential & Interleave)

EMRS cycle with address

Product ID

Max Freq.

Package

Comments

M52D64164A-10TG

100MHz 54 Pin TSOP II

100MHz 54 Ball BGA

Pb-free

M52D64164A-10BG

Pb-free

All inputs are sampled at the positive going edge of the

system clock

Special function support

PASR (Partial Array Self Refresh)

TCSR (Temperature Compensated Self Refresh)

DS (Driver Strength)

DQM for masking

Auto & self refresh

64ms refresh period (4K cycle)

GENERAL DESCRIPTION

The M52D64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by

16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on

every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same

device to be useful for a variety of high bandwidth, high performance memory system applications.

PIN ASSIGNMENT (Top View)

VDD

DQ0

VDDQ

DQ1

DQ2

VSSQ

DQ3

DQ4

VDDQ

53 DQ15

VSS

VSSQ

VDDQ

DQ0

VDD

VSS

DQ15

VSSQ

VDDQ

VSSQ

VDDQ

DQ2

DQ4

DQ1

DQ3

DQ14

DQ12

DQ13

DQ11

51 DQ14

50 DQ13

VDDQ

DQ12

47 DQ11

VSSQ

VDD

DQ6

DQ10

DQ8

DQ9

VDDQ

VSS

DQ5

DQ7

VSSQ

45 DQ10

44 DQ9

DQ5 10

DQ6 11

LDQM

42 DQ8

VDDQ

VSSQ

DQ7 13

UDQM

CLK

A11

CKE

CAS

BA0

RAS

BA1

VSS

VDD

LDQM 15

WE 16

40 NC

39 UDQM

38 CLK

37 CKE

36 NC

CAS 17

RAS 18

CS 19

A10

VSS

VDD

A11

BA0 20

BA1 21

A10/AP 22

VDD

VSS

Elite Semiconductor Memory Technology Inc.

Publication Date: Jul. 2009

Revision: 1.6 1/48

12 3 4 5 6 7...48

中文翻译

下载PDF

与M52D64164A相关器件

型号	品牌	获取价格	描述	数据表
M52D64164A-10BG	ESMT	获取价格	1M x 16 Bit x 4 Banks Mobile Synchronous DRAM
M52D64164A-10TG	ESMT	获取价格	1M x 16 Bit x 4 Banks Mobile Synchronous DRAM
M52D64322A	ESMT	获取价格	512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
M52D64322A-10BG	ESMT	获取价格	512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
M52L32321A	ESMT	获取价格	512K x 32Bit x 2Banks Synchronous DRAM
M52L32321A-10BG	ESMT	获取价格	512K x 32Bit x 2Banks Synchronous DRAM
M52L32321A-6BG	ESMT	获取价格	512K x 32Bit x 2Banks Synchronous DRAM
M52L32321A-7.5BG	ESMT	获取价格	512K x 32Bit x 2Banks Synchronous DRAM
M52L64164A	ESMT	获取价格	1M x 16 Bit x 4 Banks Synchronous DRAM
M52L64164A_1	ESMT	获取价格	1M x 16 Bit x 4 Banks Synchronous DRAM