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M52D5123216A-6BG PDF预览

M52D5123216A-6BG

更新时间: 2024-11-30 02:52:11
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器
页数 文件大小 规格书
46页 1073K
描述
4M x 32 Bit x 4 Banks Mobile Synchronous DRAM

M52D5123216A-6BG 数据手册

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ESMT  
M52D5123216A  
4M x 32 Bit x 4 Banks  
Mobile Synchronous DRAM  
Mobile SDRAM  
FEATURES  
ORDERING INFORMATION  
y
y
y
y
1.8V power supply  
LVCMOS compatible with multiplexed address  
Four banks operation  
Product ID  
Max Freq.  
Package  
Comments  
Pb-free  
MRS cycle with address key programs  
M52D5123216A-6BG  
M52D5123216A-7BG  
166MHz 90 Ball BGA  
143MHz 90 Ball BGA  
-
CAS Latency (2, 3)  
Pb-free  
-
-
Burst Length (1, 2, 4, 8 & full page)  
Burst Type (Sequential & Interleave)  
y
y
EMRS cycle with address  
All inputs are sampled at the positive going edge of the  
system clock  
y
Special function support  
-
PASR (Partial Array Self Refresh)  
TCSR (Temperature Compensated Self Refresh)  
DS (Driver Strength)  
-
-
-
Deep Power Down (DPD) Mode  
y
y
y
DQM for masking  
Auto & self refresh  
64ms refresh period (8K cycle)  
GENERAL DESCRIPTION  
The M52D5123216A is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by  
32 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  
every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the  
same device to be useful for a variety of high bandwidth, high performance memory system applications.  
BALL CONFIGURATION (TOP VIEW)  
(BGA 90, 8mmX13mmX1.0mm Body, 0.8mm Ball Pitch)  
1
2
3
4
5
6
7
8
9
A
B
DQ26 DQ24 VSS  
DQ28 VDDQ VSSQ  
VDD DQ23 DQ21  
VDDQ VSSQ DQ19  
DQ22 DQ20 VDDQ  
DQ17 DQ18 VDDQ  
NC DQ16 VSSQ  
A2 DQM2 VDD  
C VSSQ DQ27 DQ25  
D VSSQ DQ29 DQ30  
E VDDQ DQ31 NC  
F
G
H
J
VSS DQM3 A3  
A4  
A7  
A5  
A8  
A6  
A12  
A9  
A10  
NC  
A0  
A1  
BA1 A11  
CLK CKE  
BA0  
CAS  
CS  
RAS  
K DQM1 NC  
NC  
DQM0  
WE  
L
VDDQ DQ8 VSS  
VDD DQ7 VSSQ  
DQ6 DQ5 VDDQ  
DQ1 DQ3 VDDQ  
VDDQ VSSQ DQ4  
VDD DQ0 DQ2  
M VSSQ DQ10 DQ9  
N VSSQ DQ12 DQ14  
P
R
DQ11 VDDQ VSSQ  
DQ13 DQ15 VSS  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Aug. 2016  
Revision: 1.1 1/46  

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