5秒后页面跳转
M52D32321A-7BG PDF预览

M52D32321A-7BG

更新时间: 2024-02-07 19:00:10
品牌 Logo 应用领域
晶豪 - ESMT 存储内存集成电路动态存储器手机
页数 文件大小 规格书
30页 834K
描述
512K x 32Bit x 2Banks Mobile Synchronous DRAM

M52D32321A-7BG 技术参数

生命周期:Contact Manufacturer零件包装代码:BGA
包装说明:VFBGA,针数:90
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.62
Is Samacsys:N访问模式:DUAL BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PBGA-B90长度:13 mm
内存密度:33554432 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:32功能数量:1
端口数量:1端子数量:90
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX32
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
认证状态:Not Qualified座面最大高度:1 mm
自我刷新:YES最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
宽度:8 mmBase Number Matches:1

M52D32321A-7BG 数据手册

 浏览型号M52D32321A-7BG的Datasheet PDF文件第2页浏览型号M52D32321A-7BG的Datasheet PDF文件第3页浏览型号M52D32321A-7BG的Datasheet PDF文件第4页浏览型号M52D32321A-7BG的Datasheet PDF文件第5页浏览型号M52D32321A-7BG的Datasheet PDF文件第6页浏览型号M52D32321A-7BG的Datasheet PDF文件第7页 
ESMT  
M52D32321A  
Mobile SDRAM  
512K x 32Bit x 2Banks  
Mobile Synchronous DRAM  
FEATURES  
GENERAL DESCRIPTION  
The M52D32321A is 33,554,432 bits synchronous high  
data rate Dynamic RAM organized as 2 x 524,288 words by  
32 bits, fabricated with high performance CMOS technology.  
Synchronous design allows precise cycle control with the  
use of system clock I/O transactions are possible on every  
clock cycle. Range of operating frequencies, programmable  
burst length and programmable latencies allow the same  
device to be useful for a variety of high bandwidth, high  
performance memory system applications.  
z
z
z
z
1.8V power supply  
LVCMOS compatible with multiplexed address  
Dual banks operation  
MRS cycle with address key programs  
-
-
-
CAS Latency (1, 2 & 3 )  
Burst Length (1, 2, 4, 8 & full page)  
Burst Type (Sequential & Interleave)  
z
z
EMRS cycle with address key programs.  
All inputs are sampled at the positive going edge of the  
system clock  
z
z
Burst Read Single-bit Write operation  
Special Function Support.  
ORDERING INFORMATION  
-
-
-
PASR (Partial Array Self Refresh )  
TCSR (Temperature compensated Self Refresh)  
DS (Driver Strength)  
Max  
Freq.  
Product ID  
Package  
Comments  
M52D32321A -7BG 143MHz 90 Ball BGA  
M52D32321A -10BG 100MHz 90 Ball BGA  
Pb-free  
Pb-free  
z
z
z
DQM for masking  
Auto & self refresh  
64ms refresh period (4K cycle)  
PIN CONFIGURATION (TOP VIEW)  
90 Ball BGA  
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
DQ26 DQ24 VSS  
DQ28 VDDQ VSSQ  
VSSQ DQ27 DQ25  
VSSQ DQ29 DQ30  
VDDQ DQ31 NC  
VSS DQM3 A3  
VDD DQ23 DQ21  
VDDQ VSSQ DQ19  
DQ22 DQ20 VDDQ  
DQ17 DQ18 VDDQ  
NC DQ16 VSSQ  
A2 DQM2 VDD  
G
H
J
A4  
A7  
A5  
A8  
A6  
NC  
A9  
A10  
NC  
A0  
NC  
CS  
WE  
A1  
NC  
CLK CKE  
DQM1 NC  
BA  
RAS  
DQM0  
K
L
NC  
CAS  
VDDQ DQ8 VSS  
VSSQ DQ10 DQ9  
VSSQ DQ12 DQ14  
DQ11 VDDQ VSSQ  
DQ13 DQ15 VSS  
VDD DQ7 VSSQ  
DQ6 DQ5 VDDQ  
DQ1 DQ3 VDDQ  
VDDQ VSSQ DQ4  
VDD DQ0 DQ2  
M
N
P
R
Elite Semiconductor Memory Technology Inc.  
Publication Date : May 2009  
Revision : 1.6  
1/30  

与M52D32321A-7BG相关器件

型号 品牌 获取价格 描述 数据表
M52D5121632A ESMT

获取价格

8M x 16 Bit x 4 Banks Mobile Synchronous DRAM
M52D5121632A-5BG ESMT

获取价格

8M x 16 Bit x 4 Banks Mobile Synchronous DRAM
M52D5121632A-6BG ESMT

获取价格

8M x 16 Bit x 4 Banks Mobile Synchronous DRAM
M52D5121632A-7BG ESMT

获取价格

8M x 16 Bit x 4 Banks Mobile Synchronous DRAM
M52D5123216A ESMT

获取价格

4M x 32 Bit x 4 Banks Mobile Synchronous DRAM
M52D5123216A-6BG ESMT

获取价格

4M x 32 Bit x 4 Banks Mobile Synchronous DRAM
M52D5123216A-7BG ESMT

获取价格

4M x 32 Bit x 4 Banks Mobile Synchronous DRAM
M52D64164A ESMT

获取价格

1M x 16 Bit x 4 Banks Mobile Synchronous DRAM
M52D64164A-10BG ESMT

获取价格

1M x 16 Bit x 4 Banks Mobile Synchronous DRAM
M52D64164A-10TG ESMT

获取价格

1M x 16 Bit x 4 Banks Mobile Synchronous DRAM