Datasheet > M52D128168A_09

M52D128168A_09

更新时间： 2024-09-25 05:46:55

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器手机
页数	文件大小	规格书
48页	1178K
描述
2M x 16 Bit x 4 Banks Mobile Synchronous DRAM

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中文翻译

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M52D128168A_09 数据手册

ESMT

M52D128168A

Mobile SDRAM

2M x 16 Bit x 4 Banks

Mobile Synchronous DRAM

FEATURES

ORDERING INFORMATION

1.8V power supply

LVCMOS compatible with multiplexed address

Four banks operation

MRS cycle with address key programs

- CAS Latency (2 & 3)

Product ID

Max Freq.

Package

Comments

Pb-free

M52D128168A-7TG

M52D128168A-7BG

143MHz

54 TSOP II

- Burst Length (1, 2, 4, 8 & full page)

- Burst Type (Sequential & Interleave)

EMRS cycle with address

All inputs are sampled at the positive going edge of the

system clock

143MHz 54 Ball FBGA

54 TSOP II

M52D128168A-7.5BG 133MHz 54 Ball FBGA

M52D128168A-10TG 100MHz 54 TSOP II

M52D128168A-10BG 100MHz 54 Ball FBGA

M52D128168A-7.5TG 133MHz

Special function support

PASR (Partial Array Self Refresh)

TCSR (Temperature Compensated Self Refresh)

DS (Driver Strength)

DQM for masking

Auto & self refresh

64ms refresh period (4K cycle)

GENERAL DESCRIPTION

The M52D128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152

words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are

possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies

allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

PIN ASSIGNMENT (Top View)

V^DD

DQ0

V^DDQ

DQ1

DQ2

V^SSQ

DQ3

DQ4

V^DDQ

53 DQ15

52 V^SSQ

V^SS

VSSQ

VDDQ

DQ0

VDD

VSS

DQ15

51 DQ14

50 DQ13

VDDQ

VSSQ

VDDQ

DQ2

DQ4

DQ1

DQ3

DQ14

DQ12

DQ13

DQ11

V^DDQ

DQ12

47 DQ11

46 V^SSQ

VSSQ

VDD

DQ6

DQ10

DQ8

DQ9

VDDQ

VSS

CKE

DQ5

DQ7

45 DQ10

44 DQ9

DQ5 10

DQ6 11

LDQM

42 DQ8

41 V^SS

V^DDQ

V^SSQ

DQ7 13

V^DD14

UDQM

CLK

A11

CAS

BA0

RAS

BA1

LDQM 15

WE 16

40 NC

39 UDQM

38 CLK

37 CKE

36 NC

CAS 17

RAS 18

CS 19

A10

A¹¹

BA0 20

BA1 21

A¹⁰/AP 22

54 Ball FBGA

(8x8mm)

(mm ball pitch)

VSS

VDD

A⁰

VDD

VSS

Elite Semiconductor Memory Technology Inc.

Publication Date: Aug. 2009

Revision: 1.3 1/48

12 3 4 5 6 7...48

中文翻译

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与M52D128168A_09相关器件

型号	品牌	获取价格	描述	数据表
M52D128168A_1	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-10BG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-10BIG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-10TG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-10TIG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-5BIG2E	ESMT	获取价格	Synchronous DRAM, 8MX16, CMOS, PBGA54, FBGA-54
M52D128168A-6BG2E	ESMT	获取价格	Synchronous DRAM, 8MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FRE
M52D128168A-6BIG2E	ESMT	获取价格	Synchronous DRAM, 8MX16, CMOS, PBGA54, FBGA-54
M52D128168A-7.5BG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM
M52D128168A-7.5BIG	ESMT	获取价格	2M x 16 Bit x 4 Banks Synchronous DRAM

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