是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.14 | Is Samacsys: | N |
其他特性: | SMA, I/P POWER-MAX (PEAK)=26DBM | 特性阻抗: | 50 Ω |
构造: | COAXIAL | 最大变频损耗: | 13 dB |
最大工作频率: | 24000 MHz | 最小工作频率: | 2000 MHz |
最高工作温度: | 50 °C | 最低工作温度: | |
射频/微波设备类型: | TRIPLE BALANCED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M52D128168A | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Synchronous DRAM | |
M52D128168A_09 | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Mobile Synchronous DRAM | |
M52D128168A_1 | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Synchronous DRAM | |
M52D128168A-10BG | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Synchronous DRAM | |
M52D128168A-10BIG | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Synchronous DRAM | |
M52D128168A-10TG | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Synchronous DRAM | |
M52D128168A-10TIG | ESMT |
获取价格 |
2M x 16 Bit x 4 Banks Synchronous DRAM | |
M52D128168A-5BIG2E | ESMT |
获取价格 |
Synchronous DRAM, 8MX16, CMOS, PBGA54, FBGA-54 | |
M52D128168A-6BG2E | ESMT |
获取价格 |
Synchronous DRAM, 8MX16, 5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FRE | |
M52D128168A-6BIG2E | ESMT |
获取价格 |
Synchronous DRAM, 8MX16, CMOS, PBGA54, FBGA-54 |