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M50LPW116N5TG PDF预览

M50LPW116N5TG

更新时间: 2024-11-04 13:10:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
36页 260K
描述
2MX8 FLASH 3V PROM, 11ns, PDSO40, 10 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-40

M50LPW116N5TG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP包装说明:10 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-40
针数:40Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.47最长访问时间:11 ns
启动块:TOP命令用户界面:YES
数据轮询:NOJESD-30 代码:R-PDSO-G40
JESD-609代码:e3长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1,2,1,30,16端子数量:40
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-20 °C组织:2MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP40,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K,4K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:TIN
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NOR TYPE
宽度:10 mmBase Number Matches:1

M50LPW116N5TG 数据手册

 浏览型号M50LPW116N5TG的Datasheet PDF文件第2页浏览型号M50LPW116N5TG的Datasheet PDF文件第3页浏览型号M50LPW116N5TG的Datasheet PDF文件第4页浏览型号M50LPW116N5TG的Datasheet PDF文件第5页浏览型号M50LPW116N5TG的Datasheet PDF文件第6页浏览型号M50LPW116N5TG的Datasheet PDF文件第7页 
M50LPW116  
16 Mbit (2Mb x8, Boot Block)  
3V Supply Low Pin Count Flash Memory  
PRELIMINARY DATA  
SUPPLY VOLTAGE  
– V = 3V to 3.6V for Program, Erase and  
CC  
Read Operations  
– V = 12V for Fast Program and Fast Erase  
PP  
TWO INTERFACES  
– Low Pin Count (LPC) Standard Interface for  
embedded operation with PC Chipsets.  
– Address/Address Multiplexed (A/A Mux) In-  
terface for programming equipment compati-  
bility.  
TSOP40 (N)  
10 x 20mm  
LOW PIN COUNT (LPC) HARDWARE  
INTERFACE MODE  
– 5 Signal Communication Interface supporting  
Read and Write Operations  
– Hardware Write Protect Pins for Block Pro-  
tection  
Figure 1. Logic Diagram (LPC Interface)  
– Register Based Read and Write Protection  
– 5 Additional General Purpose Inputs for plat-  
form design flexibility  
V
V
CC PP  
– Synchronized with 33 MHz PCI clock  
BYTE PROGRAMMING TIME  
– Single Byte Mode: 10µs (typical)  
– Quadruple Byte Mode: 2.5µs (typical)  
50 MEMORY BLOCKS  
4
5
4
LAD0-  
LAD3  
ID0-ID3  
GPI0-  
GPI4  
WP  
– 1 Boot Block  
– 18 Parameter and 31 Main Blocks  
PROGRAM/ERASE CONTROLLER  
LFRAME  
CLK  
IC  
TBL  
M50LPW116  
– Embedded Byte Program and Block/Chip  
Erase algorithms  
– Status Register Bits  
RP  
PROGRAM and ERASE SUSPEND  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: 30h  
INIT  
V
SS  
AI05466  
February 2003  
1/36  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

M50LPW116N5TG 替代型号

型号 品牌 替代类型 描述 数据表
M50LPW116N5G STMICROELECTRONICS

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M50FW016N5G STMICROELECTRONICS

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