Datasheet > M48T58Y_11

M48T58Y_11

更新时间： 2024-11-14 12:23:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		静态存储器
页数	文件大小	规格书
33页	495K
描述
5.0 V, 64 Kbit (8 Kb x 8) TIMEKEEPERÂ® SRAM

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中文翻译

获取价格

数据手册

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M48T58Y_11 数据手册

M48T58

M48T58Y

5.0 V, 64 Kbit (8 Kb x 8) TIMEKEEPER^®SRAM

Features

■ Integrated, ultra low power SRAM, real-time

clock, power-fail control circuit and battery

™

■ BYTEWIDE RAM-like clock access

■ BCD coded year, month, day, date, hours,

minutes, and seconds

■ Frequency test output for real-time clock

■ Automatic power-fail chip deselect and WRITE

PCDIP28

Battery/crystal

CAPHAT™

protection

■ WRITE protect voltages

= power-fail deselect voltage):

PFD

– M48T58: V = 4.75 to 5.5 V;

4.5 V ≤ V

– M48T58Y: V = 4.5 to 5.5 V;

≤ 4.75 V

PFD

SNAPHAT

≤ 4.5 V

Battery/crystal

4.2 V ≤ V

PFD

■ Self-contained battery and crystal in the

™

CAPHAT DIP package

■ Packaging includes a 28-lead SOIC and

SNAPHAT top (to be ordered separately)

■ SOIC package provides direct connection for a

snaphat housing containing the battery and

crystal

■ Pin and function compatible with JEDEC

SOH28

standard 8 Kb x 8 SRAMs

■ RoHS compliant

– Lead-free second level interconnect

June 2011

Doc ID 2412 Rev 8

1/33

www.st.com

12 3 4 5 6 7...33

中文翻译

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