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M48T58Y-70MH1FE PDF预览

M48T58Y-70MH1FE

更新时间: 2024-11-14 03:03:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器
页数 文件大小 规格书
31页 260K
描述
5.0V, 64 Kbit (8 Kb x 8) TIMEKEEPER SRAM

M48T58Y-70MH1FE 数据手册

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M48T58  
M48T58Y  
5.0V, 64 Kbit (8 Kb x 8) TIMEKEEPER® SRAM  
Features  
Integrated, ultra low power SRAM, real time  
clock, power-fail control circuit and battery  
BYTEWIDE™ RAM-like clock access  
BCD coded year, month, day, date, hours,  
28  
minutes, and seconds  
1
Frequency test output for real time clock  
Automatic power-fail chip deselect and write  
PCDIP28 (PC)  
Battery/Crystal  
CAPHAT  
protection  
Write protect voltages  
(V  
= power-fail deselect voltage):  
PFD  
– M48T58: V = 4.75 to 5.5V  
CC  
SNAPHAT (SH)  
Battery/Crystal  
4.5V V  
– M48T58Y: V = 4.5 to 5.5V  
4.75V  
PFD  
CC  
4.2V V  
4.5V  
PFD  
Self-contained battery and crystal in the  
CAPHAT™ dip package  
Packaging includes a 28-lead SOIC and  
®
SNAPHAT top (to be ordered separately)  
SOIC package provides direct connection for a  
snaphat housing containing the battery and  
crystal  
28  
1
Pin and function compatible with JEDEC  
standard 8 Kb x8 SRAMs  
SOH28 (MH)  
RoHS compliant  
– Lead-free second level interconnect  
August 2007  
Rev 5  
1/31  
www.st.com  
1

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