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M471B6474DZ1-CG8 PDF预览

M471B6474DZ1-CG8

更新时间: 2024-02-24 09:10:14
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
31页 523K
描述
DDR DRAM Module, 64MX64, CMOS, ROHS COMPLIANT, SO-DIMM-204

M471B6474DZ1-CG8 技术参数

生命周期:Obsolete零件包装代码:DMA
包装说明:DIMM,针数:204
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.84
访问模式:SINGLE BANK PAGE BURST其他特性:SELF CONTAINED REFRESH
JESD-30 代码:R-XDMA-N204内存密度:4294967296 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:64
功能数量:1端口数量:1
端子数量:204字数:67108864 words
字数代码:64000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:64MX64封装主体材料:UNSPECIFIED
封装代码:DIMM封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
自我刷新:YES最大供电电压 (Vsup):1.575 V
最小供电电压 (Vsup):1.425 V标称供电电压 (Vsup):1.5 V
表面贴装:NO技术:CMOS
温度等级:OTHER端子形式:NO LEAD
端子位置:DUALBase Number Matches:1

M471B6474DZ1-CG8 数据手册

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Unbuffered SoDIMM  
DDR3 SDRAM  
DDR3 SDRAM Specification  
204pin Unbuffered SODIMM based on 1Gb D-die  
64-bit Non-ECC  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications  
where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any gov-  
ernmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
1 of 31  
Rev. 0.5 November 2007  

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