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M45PE40-VMW6TG PDF预览

M45PE40-VMW6TG

更新时间: 2024-11-19 21:53:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路光电二极管时钟
页数 文件大小 规格书
35页 538K
描述
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

M45PE40-VMW6TG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SOP, SOP8,.3针数:8
Reach Compliance Code:compliant风险等级:5.52
最大时钟频率 (fCLK):33 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:5.3 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:2.5 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
类型:NOR TYPE宽度:5.25 mm
最长写入周期时间 (tWC):25 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

M45PE40-VMW6TG 数据手册

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M45PE40  
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory  
With Byte-Alterability and a 33 MHz SPI Bus Interface  
FEATURES SUMMARY  
4Mbit of Page-Erasable Flash Memory  
Page Write (up to 256 Bytes) in 11ms (typical)  
Page Program (up to 256 Bytes) in 1.2ms  
(typical)  
Figure 1. Packages  
Page Erase (256 Bytes) in 10ms (typical)  
Sector Erase (512 Kbit)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
33MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signature  
VDFPN8 (MP)  
6x5mm (MLP8)  
JEDEC Standard Two-Byte Signature  
(4013h)  
More than 100000 Write Cycles  
More than 20 Year Data Retention  
Packages  
8
ECOPACK® (RoHS compliant)  
1
SO8W (MW)  
208 mils width  
October 2005  
1/35  

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