是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SOIC | 包装说明: | HVSON, SOLCC8,.25 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.53 | 最大时钟频率 (fCLK): | 33 MHz |
数据保留时间-最小值: | 20 | 耐久性: | 100000 Write/Erase Cycles |
JESD-30 代码: | R-XDSO-N8 | 长度: | 6 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | FLASH |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX8 | 封装主体材料: | UNSPECIFIED |
封装代码: | HVSON | 封装等效代码: | SOLCC8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
并行/串行: | SERIAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 3/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
串行总线类型: | SPI | 最大待机电流: | 0.00001 A |
子类别: | Flash Memories | 最大压摆率: | 0.015 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | NO LEAD | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
类型: | NOR TYPE | 宽度: | 5 mm |
最长写入周期时间 (tWC): | 25 ms | 写保护: | HARDWARE/SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M45PE40-VMW6 | STMICROELECTRONICS |
获取价格 |
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz | |
M45PE40-VMW6G | STMICROELECTRONICS |
获取价格 |
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz | |
M45PE40-VMW6G | NUMONYX |
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4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz | |
M45PE40-VMW6G | MICRON |
获取价格 |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher | |
M45PE40-VMW6P | STMICROELECTRONICS |
获取价格 |
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz | |
M45PE40-VMW6P | NUMONYX |
获取价格 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz | |
M45PE40-VMW6T | STMICROELECTRONICS |
获取价格 |
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz | |
M45PE40-VMW6TG | NUMONYX |
获取价格 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz | |
M45PE40-VMW6TG | STMICROELECTRONICS |
获取价格 |
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz | |
M45PE40-VMW6TG | MICRON |
获取价格 |
4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher |