5秒后页面跳转
M45PE40-VMP6P PDF预览

M45PE40-VMP6P

更新时间: 2024-11-19 22:46:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路时钟
页数 文件大小 规格书
35页 538K
描述
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

M45PE40-VMP6P 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:VSON, SOLCC8,.25
针数:8Reach Compliance Code:compliant
风险等级:5.53Is Samacsys:N
最大时钟频率 (fCLK):33 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-XDSO-N8
长度:6 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:8
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:UNSPECIFIED封装代码:VSON
封装等效代码:SOLCC8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:5 mm最长写入周期时间 (tWC):25 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

M45PE40-VMP6P 数据手册

 浏览型号M45PE40-VMP6P的Datasheet PDF文件第2页浏览型号M45PE40-VMP6P的Datasheet PDF文件第3页浏览型号M45PE40-VMP6P的Datasheet PDF文件第4页浏览型号M45PE40-VMP6P的Datasheet PDF文件第5页浏览型号M45PE40-VMP6P的Datasheet PDF文件第6页浏览型号M45PE40-VMP6P的Datasheet PDF文件第7页 
M45PE40  
4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory  
With Byte-Alterability and a 33 MHz SPI Bus Interface  
FEATURES SUMMARY  
4Mbit of Page-Erasable Flash Memory  
Page Write (up to 256 Bytes) in 11ms (typical)  
Page Program (up to 256 Bytes) in 1.2ms  
(typical)  
Figure 1. Packages  
Page Erase (256 Bytes) in 10ms (typical)  
Sector Erase (512 Kbit)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
33MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signature  
VDFPN8 (MP)  
6x5mm (MLP8)  
JEDEC Standard Two-Byte Signature  
(4013h)  
More than 100000 Write Cycles  
More than 20 Year Data Retention  
Packages  
8
ECOPACK® (RoHS compliant)  
1
SO8W (MW)  
208 mils width  
October 2005  
1/35  

与M45PE40-VMP6P相关器件

型号 品牌 获取价格 描述 数据表
M45PE40-VMP6T STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz
M45PE40-VMP6TG STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz
M45PE40-VMP6TG NUMONYX

获取价格

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz
M45PE40-VMP6TG MICRON

获取价格

4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher
M45PE40-VMP6TP NUMONYX

获取价格

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz
M45PE40-VMP6TP STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz
M45PE40-VMW6 STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz
M45PE40-VMW6G STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz
M45PE40-VMW6G NUMONYX

获取价格

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz
M45PE40-VMW6G MICRON

获取价格

4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher