5秒后页面跳转
M45PE40-VMP6G PDF预览

M45PE40-VMP6G

更新时间: 2024-11-20 03:51:07
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路时钟
页数 文件大小 规格书
46页 888K
描述
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

M45PE40-VMP6G 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOIC包装说明:HVSON, SOLCC8,.25
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.53Is Samacsys:N
最大时钟频率 (fCLK):33 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-XDSO-N8
长度:6 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:8
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
封装主体材料:UNSPECIFIED封装代码:HVSON
封装等效代码:SOLCC8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:5 mm最长写入周期时间 (tWC):25 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

M45PE40-VMP6G 数据手册

 浏览型号M45PE40-VMP6G的Datasheet PDF文件第2页浏览型号M45PE40-VMP6G的Datasheet PDF文件第3页浏览型号M45PE40-VMP6G的Datasheet PDF文件第4页浏览型号M45PE40-VMP6G的Datasheet PDF文件第5页浏览型号M45PE40-VMP6G的Datasheet PDF文件第6页浏览型号M45PE40-VMP6G的Datasheet PDF文件第7页 
M45PE40  
4 Mbit, low voltage, Page-Erasable Serial Flash memory  
with byte-alterability and a 50 MHz SPI bus interface  
Features  
SPI bus compatible serial interface  
50 MHz clock rate (maximum)  
2.7 V to 3.6 V single supply voltage  
4 Mbits of Page-Erasable Flash memory  
VFQFPN8 (MP)  
6 × 5 mm (MLP8)  
Page size: 256 bytes:  
– Page Write in 11 ms (typical)  
– Page Program in 0.8 ms (typical)  
– Page Erase in 10 ms (typical)  
Sector Erase (64 Kbytes)  
Hardware Write protection of the bottom sector  
(64 Kbytes)  
Electronic Signature  
SO8W (MW)  
208 mils width  
– JEDEC standard two-byte signature  
(4013h)  
Deep Power-down Mode 1µA (typical)  
More than 100 000 Write cycles  
More than 20 years’ data retention  
Packages  
SO8N (MN)  
150 mils width  
– ECOPACK® (RoHS compliant)  
December 2007  
Rev 8  
1/46  
www.numonyx.com  
1

M45PE40-VMP6G 替代型号

型号 品牌 替代类型 描述 数据表
M25P64-VME6TG NUMONYX

功能相似

64 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface

与M45PE40-VMP6G相关器件

型号 品牌 获取价格 描述 数据表
M45PE40-VMP6P NUMONYX

获取价格

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz
M45PE40-VMP6P STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz
M45PE40-VMP6T STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz
M45PE40-VMP6TG STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz
M45PE40-VMP6TG NUMONYX

获取价格

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz
M45PE40-VMP6TG MICRON

获取价格

4Mb, Page-Erasable, Serial NOR Flash Memory with Byte Alterability, 75 MHz Serial Peripher
M45PE40-VMP6TP NUMONYX

获取价格

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz
M45PE40-VMP6TP STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz
M45PE40-VMW6 STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz
M45PE40-VMW6G STMICROELECTRONICS

获取价格

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz