Fast Switching
SPDT RF Switch
50Ω 0.3 - 4500 MHz
Absorptive RF Switch with internal driver
Single Supply Voltage, +3V to +5V
Product Features
• High Isolation, 52 dB at 1 GHz
• Low insertion loss, 0.8 dB typ. at 1 GHz
• Low supply current consumption, 50 µA typ.
• Fast Rise/Fall time, 16 ns typ.
M3SWA-2-50DRA+
CASE STYLE: DL805
Typical Applications
• Defense
• Communication Infrastructure
• Test and Measurements
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
General Description
M3SWA-2-50DRA+ is a high isolation fast switching absorptive SPDT switch with integral CMOS driver,
operates with single positive supply voltage while consuming, 50 µA typical. It has been designed for wide-
band operation. It is packaged in a tiny 3.25mm x 3.25mm, 8-lead package passes 250V for ESD (HBM).
Simplified Schematic and Pad Description
RF COMMON
Cblock
DUT
RF
Section
Cblock
Cblock
RF1
RF2
Internal CMOS Driver
Control
VDD
Pad
Function
RF IN
Number
Description
RF common/ SUM port, requires external DC block
RF out #1/In port #1, requires external DC block
RF out #1/In port #2, requires external DC block
CMOS Control IN
6
RF OUT1
RF OUT2
CONTROL
VDD
1
4
2
5
Supply voltage
NC
7
No Connection
CMOS GND
GND
3
CMOS ground
8 &, paddle
RF ground
REV. OR
M157611
M3SWA-2-50DRA+
RS/CP
®
Mini-Circuits
180405
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