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M38510/13502BPX PDF预览

M38510/13502BPX

更新时间： 2024-09-18 14:52:51
品牌 Logo 应用领域
雷神 - RAYTHEON 放大器
页数 文件大小 规格书
28页 239K
描述
Operational Amplifier, 1 Func, 200000uV Offset-Max, 0.250 X 0.375 INCH, DIP-8

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M38510/13502BPX 技术参数

生命周期：Obsolete包装说明：0.250 X 0.375 INCH, DIP-8
Reach Compliance Code：unknown风险等级：5.56
Is Samacsys：N放大器类型：OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)：0.006 µA标称共模抑制比：106 dB
最大输入失调电压：200000 µVJESD-30 代码：R-XDIP-T8
负供电电压上限：-22 V标称负供电电压 (Vsup)：-15 V
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：UNSPECIFIED封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
认证状态：Not Qualified筛选级别：MIL-M-38510 Class B
供电电压上限：22 V标称供电电压 (Vsup)：15 V
表面贴装：NO温度等级：MILITARY
端子形式：THROUGH-HOLE端子位置：DUAL
Base Number Matches：1

M38510/13502BPX 数据手册

 浏览型号M38510/13502BPX的Datasheet PDF文件第2页浏览型号M38510/13502BPX的Datasheet PDF文件第3页浏览型号M38510/13502BPX的Datasheet PDF文件第4页浏览型号M38510/13502BPX的Datasheet PDF文件第5页浏览型号M38510/13502BPX的Datasheet PDF文件第6页浏览型号M38510/13502BPX的Datasheet PDF文件第7页 
INCH-POUND  
MIL-M-38510/135D  
01 June 2005  
SUPERSEDING  
MIL-M-38510/135C  
05 November 2003  
MILITARY SPECIFICATION  
MICROCIRCUITS, LINEAR, LOW OFFSET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON  
This specification is approved for use by all Departments and Agencies of the Department of Defense.  
Reactivated for new design as of 05 November 2003. May be used for either new or existing design acquisition.  
The requirement for acquiring the product herein shall consist of this specification sheet and MIL-PRF-38535.  
1. SCOPE  
1.1 Scope. This specification covers the detail requirements for monolithic silicon, low offset operational  
amplifiers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are  
reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by  
MIL-PRF-38535, (see 6.4)  
1.2 Part or identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein.  
1.2.1 Device types. Devices may be monolithic or they may consist of two separate independent die. The device  
types are as follows:  
Device type  
Circuit  
01  
02  
03  
Single operational amplifier, ultra low offset, internally compensated  
Single operational amplifier, low offset, internally compensated  
Single operational amplifier, ultra low offset, internally compensated,  
ultra low noise  
04  
05  
Dual operational amplifier, low offset, ultra low noise internally  
compensated  
Single operational amplifier, ultra low offset, internally compensated,  
ultra low noise, broadband  
1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535.  
1.2.3 Case outline. The case outline are as designated in MIL-STD-1835 and as follows:  
Outline letter  
Descriptive designator  
Terminals  
Package style  
C
G
P
2
GDIP1-T14 or CDIP2-T14  
MACY1-X8  
GDIP1-T8 or CDIP2-T8  
CQCC1-N20  
14  
8
8
Dual-in-line  
Can  
Dual-in-line  
Square leadless chip carrier  
20  
Comments, suggestions, or questions on this document should be addressed to: Commander, Defense  
Supply Center Columbus, ATTN: DSCC-VAS, 3990 East Broad St., Columbus, OH 43216-5000, or emailed  
to linear@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this  
address information using the ASSIST Online database at http://assist.daps.dla.mil.  
AMSC N/A  
FSC 5962  
1234567...28

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