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M36WT864TF100ZA6T PDF预览

M36WT864TF100ZA6T

更新时间: 2024-09-28 14:52:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
92页 565K
描述
SPECIALTY MEMORY CIRCUIT, PBGA96, 8 X 14 MM, 0.80 MM PITCH, STACK, LFBGA-96

M36WT864TF100ZA6T 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:LFBGA,针数:96
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.84其他特性:SRAM ORGANISATION IS 512K X 16
JESD-30 代码:R-PBGA-B96长度:14 mm
内存密度:67108864 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16功能数量:1
端子数量:96字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):2.2 V
最小供电电压 (Vsup):1.65 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm
Base Number Matches:1

M36WT864TF100ZA6T 数据手册

 浏览型号M36WT864TF100ZA6T的Datasheet PDF文件第2页浏览型号M36WT864TF100ZA6T的Datasheet PDF文件第3页浏览型号M36WT864TF100ZA6T的Datasheet PDF文件第4页浏览型号M36WT864TF100ZA6T的Datasheet PDF文件第5页浏览型号M36WT864TF100ZA6T的Datasheet PDF文件第6页浏览型号M36WT864TF100ZA6T的Datasheet PDF文件第7页 
M36WT864TF  
M36WT864BF  
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory  
and 8 Mbit (512K x16) SRAM, Multiple Memory Product  
PRODUCT PREVIEW  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
SRAM  
8 Mbit (512K x 16 bit)  
– V  
– V  
– V  
= 1.65V to 2.2V  
DDF  
DDS  
PPF  
EQUAL CYCLE and ACCESS TIMES: 70ns  
LOW STANDBY CURRENT  
= V  
= 2.7V to 3.3V  
DDQF  
= 12V for Fast Program (optional)  
LOW V  
DATA RETENTION: 1.5V  
DDS  
ACCESS TIME: 70, 85, 100ns  
TRI-STATE COMMON I/O  
LOW POWER CONSUMPTION  
ELECTRONIC SIGNATURE  
AUTOMATIC POWER DOWN  
– Manufacturer Code: 20h  
Figure 1. Packages  
– Top Device Code, M36WT864TF: 8810h  
– Bottom Device Code, M36WT864BF: 8811h  
FLASH MEMORY  
PROGRAMMING TIME  
– 8µs by Word typical for Fast Factory Program  
– Double/Quadruple Word Program option  
– Enhanced Factory Program options  
MEMORY BLOCKS  
FBGA  
– Multiple Bank Memory Array: 4 Mbit Banks  
– Parameter Blocks (Top or Bottom location)  
DUAL OPERATIONS  
Stacked LFBGA96 (ZA)  
8 x 14mm  
– Program Erase in one Bank while Read in  
others  
– No delay between Read and Write operations  
BLOCK LOCKING  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
SECURITY  
– 128 bit user programmable OTP cells  
– 64 bit unique device number  
– One parameter block permanently lockable  
COMMON FLASH INTERFACE (CFI)  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
July 2002  
1/92  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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