Datasheet > M36WT864

M36WT864

更新时间： 2024-01-05 13:31:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存静态存储器
页数	文件大小	规格书
92页	622K
描述
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product

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数据手册

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M36WT864 数据手册

M36WT864TF

M36WT864BF

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory

and 8 Mbit (512K x16) SRAM, Multiple Memory Product

PRODUCT PREVIEW

FEATURES SUMMARY

■ SUPPLY VOLTAGE

SRAM

■ 8 Mbit (512K x 16 bit)

■ EQUAL CYCLE and ACCESS TIMES: 70ns

– V

= 1.65V to 2.2V

DDF

DDS

PPF

= V

= 2.7V to 3.3V

DDQF

■ LOW STANDBY CURRENT

= 12V for Fast Program (optional)

■ LOW V

DATA RETENTION: 1.5V

DDS

■ ACCESS TIME: 70, 85, 100ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

■ TRI-STATE COMMON I/O

■ AUTOMATIC POWER DOWN

– Manufacturer Code: 20h

Figure 1. Packages

– Top Device Code, M36WT864TF: 8810h

– Bottom Device Code, M36WT864BF: 8811h

FLASH MEMORY

■ PROGRAMMING TIME

– 8µs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ MEMORY BLOCKS

FBGA

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ DUAL OPERATIONS

Stacked LFBGA96 (ZA)

8 x 14mm

– Program Erase in one Bank while Read in

others

– No delay between Read and Write operations

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

– One parameter block permanently lockable

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

July 2002

1/92

This is preliminary information on a new product now in development. Details are subject to change without notice.

12 3 4 5 6 7...92

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