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M36W832TE85ZA1S PDF预览

M36W832TE85ZA1S

更新时间: 2024-11-20 19:58:51
品牌 Logo 应用领域
恒忆 - NUMONYX 静态存储器内存集成电路
页数 文件大小 规格书
64页 897K
描述
SPECIALTY MEMORY CIRCUIT, PBGA66, 12 X 8 MM, 0.80 MM PITCH, LFBGA-66

M36W832TE85ZA1S 数据手册

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M36W832TE  
M36W832BE  
32 Mbit (2Mb x16, Boot Block) Flash Memory  
and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V  
– V  
– V  
= 2.7V to 3.3V  
DDF  
DDS  
PPF  
= V  
= 2.7V to 3.3V  
DDQF  
= 12V for Fast Program (optional)  
ACCESS TIMES: 70ns and 85ns  
LOW POWER CONSUMPTION  
ELECTRONIC SIGNATURE  
FBGA  
– Manufacturer Code: 20h  
– Top Device Code, M36W832TE: 88BAh  
– Bottom Device Code, M36W832BE: 88BBh  
Stacked LFBGA66 (ZA)  
12 x 8mm  
FLASH MEMORY  
32 Mbit (2Mb x16) BOOT BLOCK  
– 8 x 4 KWord Parameter Blocks (Top or  
Bottom Location)  
PROGRAMMING TIME  
– 10µs typical  
– Double Word Programming Option  
– Quadruple Word Programming Option  
BLOCK LOCKING  
SRAM  
8 Mbit (512Kb x 16)  
ACCESS TIME: 70ns  
– All blocks locked at Power up  
– Any combination of blocks can be locked  
– WPF for Block Lock-Down  
AUTOMATIC STANDBY MODE  
PROGRAM and ERASE SUSPEND  
LOW V  
DATA RETENTION: 1.5V  
DDS  
POWER DOWN FEATURES USING TWO  
CHIP ENABLE INPUTS  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
COMMON FLASH INTERFACE  
SECURITY  
– 128 bit user programmable OTP cells  
– 64 bit unique device identifier  
May 2003  
1/64  

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