Datasheet > M36W832TE-ZAT

M36W832TE-ZAT

更新时间： 2024-02-27 00:38:38

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存静态存储器
页数	文件大小	规格书
64页	845K
描述
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product

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中文翻译

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数据手册

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M36W832TE-ZAT 数据手册

M36W832TE

M36W832BE

32 Mbit (2Mb x16, Boot Block) Flash Memory

and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V

= 2.7V to 3.3V

DDF

DDS

PPF

= V

= 2.7V to 3.3V

DDQF

= 12V for Fast Program (optional)

■ ACCESS TIMES: 70ns and 85ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

FBGA

– Manufacturer Code: 20h

– Top Device Code, M36W832TE: 88BAh

– Bottom Device Code, M36W832BE: 88BBh

Stacked LFBGA66 (ZA)

12 x 8mm

FLASH MEMORY

■ 32 Mbit (2Mb x16) BOOT BLOCK

– 8 x 4 KWord Parameter Blocks (Top or

Bottom Location)

■ PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■ BLOCK LOCKING

SRAM

■ 8 Mbit (512Kb x 16)

■ ACCESS TIME: 70ns

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ AUTOMATIC STANDBY MODE

■ PROGRAM and ERASE SUSPEND

■ LOW V

DATA RETENTION: 1.5V

DDS

■ POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ COMMON FLASH INTERFACE

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device identifier

May 2003

1/64

12 3 4 5 6 7...64

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