Datasheet > M36W108B120ZM5

M36W108B120ZM5

更新时间： 2024-11-20 10:04:35

品牌	Logo	应用领域
恒忆 - NUMONYX		/
页数	文件大小	规格书
35页	247K
描述
SPECIALTY MEMORY CIRCUIT, PBGA48, 1 MM PITCH, LBGA-48

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

M36W108B120ZM5 数据手册

M36W108T

M36W108B

8 Mbit (1Mb x8, Boot Block) Flash Memory and

1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product

NOT FOR NEW DESIGN

■ M36W108T and M36W108B are replaced

respectively by the M36W108AT and

M36W108AB

■ SUPPLY VOLTAGE

– V

= V

= 2.7V to 3.6V: for Program,

CCS

CCF

Erase and Read

BGA

LGA

■ ACCESS TIME: 100ns

■ LOW POWER CONSUMPTION

– Read: 40mA max. (SRAM chip)

– Stand-by: 30µA max. (SRAM chip)

– Read: 10mA max. (Flash chip)

– Stand-by: 100µA max. (Flash chip)

LBGA48 (ZM)

6 x 8 solder balls

LGA48 (ZN)

6 x 8 solder lands

FLASH MEMORY

■ 8 Mbit (1Mb x 8) BOOT BLOCK ERASE

Figure 1. Logic Diagram

■ PROGRAMMING TIME: 10µs typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte

CCF CCS

– Status Register bits and Ready/Busy Output

■ MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameter and Main Blocks

A0-A19

DQ0-DQ7

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

M36W108T

M36W108B

■ 100,000 PROGRAM/ERASE CYCLES per

E1S

E2S

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code, M36W108T: D2h

– Device Code, M36W108B: DCh

SRAM

AI02509

■ 1 Mbit (128Kb x 8)

■ POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

■ LOW V

DATA RETENTION: 2V

May 1999

1/35

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...35

中文翻译

下载PDF

M36W108B120ZM5 替代型号

型号	品牌	替代类型	描述	数据表
M36W108B120ZM1T	NUMONYX	功能相似	Memory Circuit, 1MX8, CMOS, PBGA48, 1 MM PITCH, LBGA-48
M36W108B120ZM1T	STMICROELECTRONICS	功能相似	8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P

与M36W108B120ZM5相关器件

型号	品牌	获取价格	描述	数据表
M36W108B120ZM5T	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108B120ZM5T	NUMONYX	获取价格	暂无描述
M36W108B120ZM6	NUMONYX	获取价格	Memory Circuit, 1MX8, CMOS, PBGA48, 1 MM PITCH, LBGA-48
M36W108B120ZM6T	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108B120ZM6T	NUMONYX	获取价格	Memory Circuit, 1MX8, CMOS, PBGA48, 1 MM PITCH, LBGA-48
M36W108B120ZN1	NUMONYX	获取价格	Memory Circuit, 1MX8, CMOS, PBGA48, LGA-48
M36W108B120ZN1T	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108B120ZN1T	NUMONYX	获取价格	Memory Circuit, 1MX8, CMOS, PBGA48, LGA-48
M36W108B120ZN5T	STMICROELECTRONICS	获取价格	8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory P
M36W108B120ZN5T	NUMONYX	获取价格	Memory Circuit, 1MX8, CMOS, PBGA48, LGA-48

与M36W108B120ZM5相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

M36W108B120ZM5

M36W108B120ZM5 数据手册

M36W108B120ZM5 替代型号

与M36W108B120ZM5相关器件

与M36W108B120ZM5相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

M36W108B120ZM5

M36W108B120ZM5 数据手册

M36W108B120ZM5 替代型号

与M36W108B120ZM5相关器件

与M36W108B120ZM5相关文章

您还可以找

您在本页遇到什么问题？