M36W0R6050B3

更新时间： 2024-01-17 17:57:47

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存静态存储器
页数	文件大小	规格书
23页	469K
描述
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP

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中文翻译

获取价格

数据手册

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M36W0R6050B3 数据手册

M36P0R9070E0

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory

128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

Feature summary

FBGA

■ Multi-Chip Package

– 1 die of 512 Mbit (32Mb x 16, Multiple

Bank, Multi-Level, Burst) Flash Memory

– 1 die of 128Mbit (8Mb x16) PSRAM

■ Supply voltage

TFBGA107 (ZAC)

– V

= V

= 1.7 to 1.95V

DDQ

DDF

PPF

CCP

= 9V for fast program

■ Block locking

■ Electronic signature

– Manufacturer Code: 20h

– Device Code: 8819

– All Blocks locked at power-up

– Any combination of Blocks can be locked

with zero latency

■ ECOPACK® package available

– WP for Block Lock-Down

– Absolute Write Protection with V

= V

PPF

Flash memory

PSRAM

■ Synchronous / Asynchronous Read

– Synchronous Burst Read mode:

108MHz, 66MHz

– Asynchronous Page Read mode

– Random Access: 96ns

■ Access time: 70ns

■ User-selectable operating modes

– Asynchronous modes: Random Read, and

Write, Page Read

■ Programming time

– Synchronous modes: NOR-Flash, Full

Synchronous (Burst Read and Write)

– 4.2µs typical Word program time using

Buffer Enhanced Factory Program

command

■ Asynchronous Page Read

– Page Size: 4, 8 or 16 Words

– Subsequent Read Within Page: 20ns

■ Memory organization

– Multiple bank memory array: 64 Mbit banks

■ Burst Read

– Four Extended Flash Array (EFA) Blocks of

64 Kbits

– Fixed Length (4, 8, 16 or 32 Words) or

Continuous

■ Dual operations

– Maximum Clock Frequency: 80MHz

– program/erase in one Bank while read in

others

– No delay between read and write

operations

■ Low Power Consumption

– Active Current: < 25mA

– Standby Current: 200µA

– Deep Power-Down Current: 10µA

■ Security

■ Low Power Features

– 2112-bit user programmable OTP Cells

– 64-bit unique device number

– Partial Array Self Refresh (PASR)

– Deep Power-Down (DPD) Mode

■ 100,000 program/erase cycles per block

■ Common Flash Interface (CFI)

November 2007

Rev 3

1/23

www.numonyx.com

12 3 4 5 6 7...23

中文翻译

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与M36W0R6050B3相关器件

型号	品牌	获取价格	描述	数据表
M36W0R6050B3ZAQE	NUMONYX	获取价格	64-Mbit (4 Mbits 】16, multiple bank, burst) F
M36W0R6050B3ZAQF	NUMONYX	获取价格	64-Mbit (4 Mbits 】16, multiple bank, burst) F
M36W0R6050L4ZAME	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT
M36W0R6050L4ZAMF	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT
M36W0R6050T1	STMICROELECTRONICS	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050T1	NUMONYX	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050T1ZAQE	STMICROELECTRONICS	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050T1ZAQE	NUMONYX	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050T1ZAQF	STMICROELECTRONICS	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050T1ZAQF	NUMONYX	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas

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