Datasheet > M36W0R604BT1

M36W0R604BT1

更新时间： 2024-02-09 18:16:39

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存静态存储器
页数	文件大小	规格书
22页	442K
描述
64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package

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中文翻译

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数据手册

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M36W0R604BT1 数据手册

M36W0R6040T1

M36W0R604BT1

64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory

and 16 Mbit (1 Mb ×16) PSRAM, multi-chip package

Features

■ Multi-chip package

– 1 die of 64 Mbit (4 Mb x 16) Flash memory

– 1 die of 16 Mbit (1 Mb x 16) Pseudo SRAM

FBGA

■ Supply voltage

– V

= V

= 1.7 V to 1.95 V

DDQ

DDF

DDP

Stacked TFBGA88 (ZAQ)

8 × 10 mm

■ Low power consumption

■ Electronic signature

– Manufacturer Code: 20h

– Device Code (top flash configuration),

M36W0R6040T1: 8810h

– Device Code (bottom flash configuration),

M36W0R604BT1: 8811h

■ Block locking

– All blocks locked at Power-up

– Any combination of blocks can be locked

■ ECOPACK® packages available

– WP for Block Lock-Down

■ Security

Flash memory

– 128-bit user programmable OTP cells

– 64-bit unique device number

■ Programming time

– 8 µs by Word typical for Fast Factory

Program

■ Common Flash Interface (CFI)

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ 100 000 program/erase cycles per block

PSRAM

■ Memory blocks

■ Access time: 70 ns

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ Low standby current: 110 µA

■ Deep power down current: 10 µA

■ Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 66 MHz

– Asynchronous/ Synchronous Page Read

mode

– Random Access: 70 ns

■ Dual operations

– Program Erase in one Bank while Read in

others

– No delay between Read and Write

operations

November 2007

Rev 0.3

1/22

www.numonyx.com

12 3 4 5 6 7...22

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