Datasheet > M36W0R6040U4ZSF

M36W0R6040U4ZSF

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
恒忆 - NUMONYX		静态存储器
页数	文件大小	规格书
28页	532K
描述
Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA56, 8 X 6 MM, 1.20 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-56

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中文翻译

获取价格

数据手册

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M36W0R6040U4ZSF 数据手册

M36W0Rx0x0UL4

32- or 64-Mbit (mux I/O, multiple bank, multilevel, burst) flash

memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP

Features

■ Multichip package

– 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit

(4 Mbit x 16) mux I/O multiple bank,

multilevel, burst) flash memory

TFBGA88 (ZAM)

8 x 10 mm

TFBGA56 (ZS)

8 x 6 mm

– 1 die of 16/32 Mbit mux I/O, burst PSRAM

■ Supply voltage

– WP for block lock-down

■ Security

– V = V

= 1.7 to 1.95 V

DDQ

– V

= 9 V for fast programming

PPF

– 128 bit user programmable OTP cells

– 64 bit unique device number

■ Electronic signature

– Manufacturer code: 20h

■ 100 000 program/erase cycles per block

– 32 Mbit flash device codes:

Top - M36W0R5040U4: 8828h

Bottom - M36W0R5040L4: 8829h

PSRAM

■ Asynchronous modes

– 64 Mbit flash device codes:

Top - M36W0R6040U4 and

M36W0R6050U4: 88C0h

Bottom - M36W0R6040L4 and

M36W0R6050L4: 88C1h

– Random read 70 ns access time

– Asynchronous write

■ Synchronous mode:

– NOR flash

Flash memory

– Full synchronous (burst read and write)

■ Synchronous/asynchronous read

– Synchronous burst read mode: 66 MHz

– Random access: 70 ns

■ Burst read/write operations

– 4-, 8- and 16-word

– Clock frequency: 83 MHz

■ Synchronous burst read suspend

■ Low power consumption

– Active current: < 20 mA

– Standby current: 70 µA

■ Programming time

– 10 µs by word typical for factory program

– Double/quadruple word program option

■ Low power features

– Partial array self-refresh (PASR)

– Deep power-down (DPD) mode

■ Memory blocks

– Multiple bank memory array: 4 Mbit banks

– Parameter blocks (top or bottom location)

– Automatic temperature-compensated self-

Refresh (ATSR)

■ Dual operations

– Program erase in 1 bank, read in others

– No delay between read and write

Table 1.

Device summary

M36W0Rx0x0UL4

■ Common flash interface (CFI)

M36W0R5040U4

M36W0R6040U4

M36W0R6050U4

M36W0R5040L4

M36W0R6040L4

M36W0R6050L4

■ Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked

July 2008

Rev 6

1/28

www.numonyx.com

12 3 4 5 6 7...28

中文翻译

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与M36W0R6040U4ZSF相关器件

型号	品牌	获取价格	描述	数据表
M36W0R604BT1	NUMONYX	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050B1	STMICROELECTRONICS	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050B1	NUMONYX	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050B1ZAQE	NUMONYX	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050B1ZAQE	STMICROELECTRONICS	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050B1ZAQF	NUMONYX	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050B1ZAQF	STMICROELECTRONICS	获取价格	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flas
M36W0R6050B3	NUMONYX	获取价格	64-Mbit (4 Mbits 】16, multiple bank, burst) F
M36W0R6050B3ZAQE	NUMONYX	获取价格	64-Mbit (4 Mbits 】16, multiple bank, burst) F
M36W0R6050B3ZAQF	NUMONYX	获取价格	64-Mbit (4 Mbits 】16, multiple bank, burst) F

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