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M36LLR8760B1ZAQT PDF预览

M36LLR8760B1ZAQT

更新时间： 2024-11-02 14:43:19
品牌 Logo 应用领域
恒忆 - NUMONYX 静态存储器内存集成电路
页数 文件大小 规格书
19页 427K
描述
Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LFBGA-88

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中文翻译

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M36LLR8760B1ZAQT 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：LFBGA,针数：88
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.06其他特性：PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 代码：R-PBGA-B88JESD-609代码：e0
长度：10 mm内存密度：268435456 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：16
功能数量：1端子数量：88
字数：16777216 words字数代码：16000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-25 °C组织：16MX16
封装主体材料：PLASTIC/EPOXY封装代码：LFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
座面最大高度：1.4 mm最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子面层：TIN LEAD
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：8 mmBase Number Matches：1

M36LLR8760B1ZAQT 数据手册

 浏览型号M36LLR8760B1ZAQT的Datasheet PDF文件第2页浏览型号M36LLR8760B1ZAQT的Datasheet PDF文件第3页浏览型号M36LLR8760B1ZAQT的Datasheet PDF文件第4页浏览型号M36LLR8760B1ZAQT的Datasheet PDF文件第5页浏览型号M36LLR8760B1ZAQT的Datasheet PDF文件第6页浏览型号M36LLR8760B1ZAQT的Datasheet PDF文件第7页 
M36LLR8760T1, M36LLR8760D1  
M36LLR8760M1, M36LLR8760B1  
256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory  
64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package  
TARGET SPECIFICATION  
FEATURES SUMMARY  
■
MULTI-CHIP PACKAGE  
Figure 1. Package  
–
–
–
1 die of 256 Mbit (16Mb x16, Multiple  
Bank, Multi-level, Burst) Flash Memory  
1 die of 128 Mbit (8Mb x16, Multiple Bank,  
Multi-Level, Burst) Flash Memory  
FBGA  
1 die of 64 Mbit (4Mb x16) Pseudo SRAM  
■
■
SUPPLY VOLTAGE  
–
V
1.95V  
= V  
= V  
= V  
= 1.7 to  
DDQF  
DDF1  
DDF2  
CCP  
LFBGA88 (ZAQ)  
8 x 10mm  
–
V
= 9V for fast program (12V tolerant)  
PPF  
ELECTRONIC SIGNATURE  
–
–
Manufacturer Code: 20h  
Top Configuration (Top + Top)  
M36LLR8760T1: 880Dh + 88C4h  
Mixed Configuration (Bottom + Top)  
M36LLR8760D1: 880Eh + 88C4h  
Mixed Configuration (Top + Bottom)  
M36LLR8760M1: 880Dh + 88C5h  
■
■
COMMON FLASH INTERFACE (CFI)  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
–
–
–
■
DUAL OPERATIONS  
–
program/erase in one Bank while read in  
others  
–
No delay between read and write  
operations  
Bottom Configuration (Bottom + Bottom)  
M36LLR8760B1: 880Eh + 88C5h  
■
■
SECURITY  
■
PACKAGE  
–
–
–
64 bit unique device number  
2112 bit user programmable OTP Cells  
Compliant with Lead-Free Soldering  
Processes  
Lead-Free Versions  
BLOCK LOCKING  
–
–
–
All blocks locked at power-up  
Any combination of blocks can be locked  
with zero latency  
FLASH MEMORIES  
■
SYNCHRONOUS / ASYNCHRONOUS READ  
–
–
WP for Block Lock-Down  
Absolute Write Protection with V  
–
–
–
Synchronous Burst Read mode: 54MHz  
Asynchronous Page Read mode  
Random Access: 85ns  
F
= V  
SS  
PPF  
PSRAM  
■
■
SYNCHRONOUS BURST READ SUSPEND  
PROGRAMMING TIME  
–
■
■
ACCESS TIME: 70ns  
ASYNCHRONOUS PAGE READ  
–
–
10µs typical Word program time using  
Buffer Enhanced Factory Program  
command  
Page Size: 16 words  
Subsequent read within page: 20ns  
■
MEMORY ORGANIZATION  
■
■
LOW POWER FEATURES  
–
Multiple Bank Memory Array:  
16 Mbit Banks for the 256 Mbit Memory  
8 Mbit Banks for the 128 Mbit Memory  
–
Temperature Compensated Refresh  
(TCR)  
–
–
Partial Array Refresh (PAR)  
Deep Power-Down (DPD) Mode  
–
Parameter Blocks (at Top or Bottom)  
SYNCHRONOUS BURST READ/WRITE  
July 2005  
1/19  
This is preliminary information on a new product forseen to be developed. Details are subject to change without notice.  
1234567...19

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与M36LLR8760B1ZAQT相关器件

型号 品牌 获取价格 描述 数据表
M36LLR8760D STMICROELECTRONICS

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 		256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8
M36LLR8760D1 STMICROELECTRONICS

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 		256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8
M36LLR8760D1ZAQ NUMONYX

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 		Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LFBGA-88
M36LLR8760D1ZAQE NUMONYX

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 		Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36LLR8760D1ZAQF NUMONYX

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 		Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36LLR8760D1ZAQT NUMONYX

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 		SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LFBGA-88
M36LLR8760DF STMICROELECTRONICS

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 		256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8
M36LLR8760M STMICROELECTRONICS

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 		256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8
M36LLR8760M1 STMICROELECTRONICS

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 		256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8
M36LLR8760M1ZAQ STMICROELECTRONICS

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 		SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LFBGA-88

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