Datasheet > M36L0T8060T1ZAQE

M36L0T8060T1ZAQE

更新时间： 2024-01-16 14:46:36

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		静态存储器内存集成电路
页数	文件大小	规格书
22页	232K
描述
IC,MIXED MEMORY,FLASH+PSRAM,HYBRID,BGA,88PIN,PLASTIC

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中文翻译

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技术参数
数据手册

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M36L0T8060T1ZAQE 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
最长访问时间：	85 ns	JESD-30 代码：	R-PBGA-B88
内存集成电路类型：	MEMORY CIRCUIT	混合内存类型：	FLASH+PSRAM
端子数量：	88	最高工作温度：	85 °C
最低工作温度：	-25 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA88,8X12,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, FINE PITCH
电源：	1.8,3 V	认证状态：	Not Qualified
子类别：	Other Memory ICs	表面贴装：	YES
技术：	HYBRID	温度等级：	OTHER
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	Base Number Matches：	1

M36L0T8060T1ZAQE 数据手册

M36L0T8060T1

M36L0T8060B1

256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory

and 64 Mbit PSRAM, 1.8 V core, 3 V I/O supply, multichip package

Features

Multichip package

■ 1 die of 256 Mbit (16 Mb ×16, multiple bank,

FBGA

multilevel, burst) Flash memory

■ 1 die of 64 Mbit (4 Mb ×16) Pseudo SRAM

■ Supply voltage

TFBGA88 (ZAQ)

8 x 10 mm

– V

= 1.7 V to 1.95 V

DDF

= V

= 2.7 V to 3.1 V

CCP

DDQF

= 9 V for fast program

PPF

■ Electronic signature

– Manufacturer code: 20h

■ Security

– Top device code

M36L0T8060T1: 880Dh

– 64 bit unique device number

– Bottom device code

M36L0T8060B1: 880Eh

– 2112 bit user programmable OTP cells

■ Block locking

■ Package

– All blocks locked at power-up

– ECOPACK®

– Any combination of blocks can be locked

with zero latency

Flash memory

– WP for block lock-down

■ Synchronous/asynchronous read

– Synchronous burst read mode: 52 MHz

– Asynchronous page read mode

– Random access: 85 ns

– Absolute write protection with V

= V

PPF

■ Common Flash interface (CFI)

PSRAM

■ Synchronous burst read suspend

■ Programming time

■ Access time: 65 ns

■ Low standby current: 90 µA (T ≤40 °C)

– 5 µs typical word program time using Buffer

Enhanced Factory Program command

■ Deep power-down current: 10 µA

■ Byte control: UB/LB

■ Memory organization

■ Compatible with standard LPSRAM

■ Wide operating temperature

– Multiple bank memory array: 16 Mbit banks

– Parameter blocks (top or bottom location)

– T = –30 to +85 °C

■ Dual operations

■ Power-down modes

– Program/erase in one bank while read in

others

– Deep power-down

– No delay between read and write

operations

■ 100 000 program/erase cycles per block

February 2008

Rev 1

1/22

www.st.com

12 3 4 5 6 7...22

中文翻译

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与M36L0T8060T1ZAQE相关器件

型号	品牌	获取价格	描述	数据表
M36L0T8060T1ZAQF	STMICROELECTRONICS	获取价格	IC,MIXED MEMORY,FLASH+PSRAM,HYBRID,BGA,88PIN,PLASTIC
M36LLR8760	STMICROELECTRONICS	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Sup
M36LLR8760B1	STMICROELECTRONICS	获取价格	256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8
M36LLR8760B1ZAQ	STMICROELECTRONICS	获取价格	暂无描述
M36LLR8760B1ZAQE	NUMONYX	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36LLR8760B1ZAQF	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-88
M36LLR8760B1ZAQT	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LFBGA-88
M36LLR8760D	STMICROELECTRONICS	获取价格	256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8
M36LLR8760D1	STMICROELECTRONICS	获取价格	256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8
M36LLR8760D1ZAQ	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LFBGA-88

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