Datasheet > M36L0R7060U3ZSF

M36L0R7060U3ZSF

更新时间： 2023-02-26 13:31:10

品牌	Logo	应用领域
恒忆 - NUMONYX		内存集成电路
页数	文件大小	规格书
29页	559K
描述
Memory Circuit, 8MX16, CMOS, PBGA56, 8 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-56

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中文翻译

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数据手册

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M36L0R7060U3ZSF 数据手册

M36L0Rx0x0UL3

128- or 256-Mbit (mux I/O, multiple bank, multilevel, burst) flash

memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP

Target Specification

Features

■ Multichip package

FBGA

– 1 die of 128 Mbits (8 Mbits x16) or 256

Mbits (16 Mbits x16), mux I/O multiple

bank, multilevel, burst flash memory

– 1 die of 32 or 64 Mbits mux I/O, burst

PSRAM

TFBGA56 (ZS)

8 x 6 mm

TFBGA88 (ZAM)

8 x 10 mm

■ Supply voltage

– V

= V

= V = 1.7 to 1.95 V

DDQF

■ Security

DDF

PPF

DDP

= 9 V for fast program

– 64-bit unique device number

– 2112-bit user programmable OTP cells

■ Electronic signature

– Manufacturer code: 20h

■ Common flash interface (CFI)

– Device codes (top flash configuration):

M36L0R7050U3/M36L0R7060U3: 882Eh

M36L0R8050U3/M36L0R8060U3: 881Ch

■ 100,000 program/erase cycles per block

PSRAM

■ Access time: 70 ns

– Device codes (bottom flash configuration)

M36L0R7050L3/M36L0R7060L3: 882Fh

M36L0R8050L3/M36L0R8060L3: 881Dh

■ Synchronous modes:

– Synchronous write: continuous burst

Flash memory

– Synchronous read: continuous burst or

fixed length: 4, 8 or 16 words for 32-Mbit

devices; 4, 8, 16 or 32 words for 64-Mbit

devices

■ Synchronous/asynchronous read

– Synchronous burst read mode: 66 MHz

– Random access: 70 ns

– Maximum clock frequency: 83 MHz

■ Programming time

■ Low-power features

– 2.5 µs typical word program time using

buffer enhanced factory program command

– Partial array self-refresh (PASR)

– Deep power-down (DPD) mode

■ Memory organization

– Automatic temperature-compensated self-

refresh

– Multiple bank memory array: 8-Mbit banks

– Parameter blocks (top or bottom location)

Table 1.

Device summary

M36L0Rx0xoUL3

■ Dual operations

– Program/erase in one bank, read in others

■ Block locking

M36L0R7050U3

M36L0R7060U3

M36L0R8050U3

M36L0R8060U3

M36L0R7050L3

M36L0R7060L3

M36L0R8050L3

M36L0R8060L3

– All blocks locked at power-up

– Any combination of blocks can be locked

with zero latency

– WP for block lock-down

– Absolute write protection with V

= V

PPF

March 2008

Rev 2

1/29

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

www.numonyx.com

12 3 4 5 6 7...29

中文翻译

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与M36L0R7060U3ZSF相关器件

型号	品牌	获取价格	描述	数据表
M36L0R8050L3ZAME	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
M36L0R8050L3ZAMF	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
M36L0R8050L3ZSE	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA56, 8 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-56
M36L0R8050L3ZSF	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA56, 8 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-56
M36L0R8050U3ZAME	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
M36L0R8050U3ZSE	NUMONYX	获取价格	Memory Circuit, 16MX16, CMOS, PBGA56, 8 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-56
M36L0R8060	STMICROELECTRONICS	获取价格	128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Sup
M36L0R8060B0	STMICROELECTRONICS	获取价格	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supp
M36L0R8060B0ZAQF	STMICROELECTRONICS	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA88, 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, STACK, TFBGA-8
M36L0R8060B1	STMICROELECTRONICS	获取价格	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V

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