Datasheet > M35101-S4

M35101-S4

更新时间： 2024-01-31 04:56:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
3页	30K
描述
Contactless Memory Chip 13.56 MHz, 2048-bit High Endurance EEPROM

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M35101-S4 数据手册

M35101

Contactless Memory Chip

13.56 MHz, 2048-bit High Endurance EEPROM

DATA BRIEFING

■ ISO 14443-2 Type-B Standard Compliant

■ 13.56 MHz Carrier Frequency

■ 847 kHz Subcarrier Frequency

■ 106 Kbit/second Data Transfer

■ Internal Tuning Capacitor

■ Data Modulation:

– ASK from Reader to Card

– BPSK from Card to Reader

■ 2048-bit EEPROM with Write Protect Feature

■ BYTE and PAGE READ (up to 16 Bytes)

■ BYTE and PAGE WRITE (up to 16 Bytes)

Antenna

(C20)

Antenna

(C30)

■ Self-Timed Programming Cycle with Auto-

Erase

■ 100,000 Erase/Write Cycles (minimum)

■ 40 Year Data Retention (minimum)

■ 5 ms Programming Time (typical)

DESCRIPTION

The M35101 is a contactless memory, powered by

the received carrier electromagnetic wave. It is a

2048-bit EEPROM, organised as 16 pages of

16 x 8 bits.

Wafer

The M35101 conforms to the ISO 14443-2 Type-B

recommendation for the transfer of power and sig-

nals via radio transmission. The card reader cir-

cuitry amplitude modulates (10% modulation) the

data on the carrier using amplitude shift keying

(ASK). The card replies by load modulating the

data on the carrier using bit phase shift keying

(BPSK) of the subcarrier. The data transfer rate in

each direction is 106 Kbit/second.

Figure 1. Logic Diagram

M35101

AC1

Power

Supply

Regulator

ASK

2 Kbit

Demodulator

EEPROM

BPSK

Load

Modulator

AC0

Table 1. Signal Names

AC1

AC0

Antenna Coil

AI02490

October 1999

1/2

Complete data available under NDA.

12 3

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