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M34C02-RMB1TG PDF预览

M34C02-RMB1TG

更新时间: 2024-11-16 04:16:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
31页 258K
描述
2 Kbit Serial IC Bus EEPROM for DIMM serial presence detect

M34C02-RMB1TG 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DFP
包装说明:2 X 3 MM, ROHS COMPLIANT, UFDFPN-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.82
Is Samacsys:N最大时钟频率 (fCLK):0.4 MHz
JESD-30 代码:R-XDSO-N8长度:3 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256X8封装主体材料:UNSPECIFIED
封装代码:VSON封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:0.6 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.2 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:2 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

M34C02-RMB1TG 数据手册

 浏览型号M34C02-RMB1TG的Datasheet PDF文件第2页浏览型号M34C02-RMB1TG的Datasheet PDF文件第3页浏览型号M34C02-RMB1TG的Datasheet PDF文件第4页浏览型号M34C02-RMB1TG的Datasheet PDF文件第5页浏览型号M34C02-RMB1TG的Datasheet PDF文件第6页浏览型号M34C02-RMB1TG的Datasheet PDF文件第7页 
M34C02-W  
M34C02-L M34C02-R  
2 Kbit Serial I²C Bus EEPROM  
for DIMM serial presence detect  
Feature summary  
Software Data Protection for lower 128 Bytes  
2
Two Wire I C Serial Interface  
400kHz Transfer Rates  
Single Supply Voltage:  
– 2.5 to 5.5V for M34C02-W  
– 2.2 to 5.5V for M34C02-L  
– 1.8 to 5.5V for M34C02-R  
TSSOP8 (DW)  
169 mil width  
Byte and Page Write (up to 16 bytes)  
Random and Sequential Read modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Protection  
More than 1 million Write cycles  
More than 40 Year Data Retention  
Packages  
UFDFPN8 (MB)  
2x3mm² (MLP)  
– ECOPACK® (RoHS compliant)  
April 2006  
Rev 9  
1/31  
www.st.com  
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