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M34C02-RDW1P PDF预览

M34C02-RDW1P

更新时间: 2024-11-16 04:18:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
31页 258K
描述
2 Kbit Serial IC Bus EEPROM for DIMM serial presence detect

M34C02-RDW1P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.169 INCH, ROHS COMPLIANT, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.74
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.4 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.2 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

M34C02-RDW1P 数据手册

 浏览型号M34C02-RDW1P的Datasheet PDF文件第2页浏览型号M34C02-RDW1P的Datasheet PDF文件第3页浏览型号M34C02-RDW1P的Datasheet PDF文件第4页浏览型号M34C02-RDW1P的Datasheet PDF文件第5页浏览型号M34C02-RDW1P的Datasheet PDF文件第6页浏览型号M34C02-RDW1P的Datasheet PDF文件第7页 
M34C02-W  
M34C02-L M34C02-R  
2 Kbit Serial I²C Bus EEPROM  
for DIMM serial presence detect  
Feature summary  
Software Data Protection for lower 128 Bytes  
2
Two Wire I C Serial Interface  
400kHz Transfer Rates  
Single Supply Voltage:  
– 2.5 to 5.5V for M34C02-W  
– 2.2 to 5.5V for M34C02-L  
– 1.8 to 5.5V for M34C02-R  
TSSOP8 (DW)  
169 mil width  
Byte and Page Write (up to 16 bytes)  
Random and Sequential Read modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Protection  
More than 1 million Write cycles  
More than 40 Year Data Retention  
Packages  
UFDFPN8 (MB)  
2x3mm² (MLP)  
– ECOPACK® (RoHS compliant)  
April 2006  
Rev 9  
1/31  
www.st.com  
1

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