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M30L0R8000T0

更新时间： 2024-10-27 22:24:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
83页	1370K
描述
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory

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M30L0R8000T0 数据手册

M30L0R8000T0

M30L0R8000B0

256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst)

1.8V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Package

–

read

= 1.7V to 2.0V for program, erase and

–

= 1.7V to 2.0V for I/O Buffers

DDQ

= 9V for fast program (12V tolerant)

■

SYNCHRONOUS / ASYNCHRONOUS READ

–

Synchronous Burst Read mode:

54MHz

FBGA

–

Asynchronous Page Read mode

Random Access: 85ns

■

SYNCHRONOUS BURST READ SUSPEND

PROGRAMMING TIME

–

10µs typical Word program time using

Buffer Enhanced Factory Program

command

TFBGA88 (ZAQ) 8 x 10mm

■

MEMORY ORGANIZATION

–

Multiple Bank Memory Array: 16 Mbit

Banks

–

Parameter Blocks (Top or Bottom

location)

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

Top Device Code,

M30L0R8000T0: 880Dh.

DUAL OPERATIONS

–

program/erase in one Bank while read in

others

–

Bottom Device Code,

M30L0R8000B0: 880Eh.

–

No delay between read and write

operations

PACKAGE

BLOCK LOCKING

–

Compliant with Lead-Free Soldering

Processes

–

All blocks locked at power-up

Any combination of blocks can be locked

with zero latency

–

Lead-Free Versions

–

WP for Block Lock-Down

Absolute Write Protection with V = V

■

SECURITY

–

64 bit unique device number

2112 bit user programmable OTP Cells

■

COMMON FLASH INTERFACE (CFI)

100,000 PROGRAM/ERASE CYCLES per

BLOCK

May 2005

1/83

12 3 4 5 6 7...83

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