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M3035S-E3/4W PDF预览

M3035S-E3/4W

更新时间: 2024-11-07 19:34:59
品牌 Logo 应用领域
威世 - VISHAY 局域网功效瞄准线二极管
页数 文件大小 规格书
5页 142K
描述
DIODE 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT PACKAGE-3, Rectifier Diode

M3035S-E3/4W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.52
Samacsys Description:Schottky Diodes & Rectifiers 35 Volt 30A Single 200 Amp IFSM其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.66 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

M3035S-E3/4W 数据手册

 浏览型号M3035S-E3/4W的Datasheet PDF文件第2页浏览型号M3035S-E3/4W的Datasheet PDF文件第3页浏览型号M3035S-E3/4W的Datasheet PDF文件第4页浏览型号M3035S-E3/4W的Datasheet PDF文件第5页 
M(B,I)3035S, M(B,I)3045S  
Vishay General Semiconductor  
www.vishay.com  
Schottky Barrier Rectifier  
FEATURES  
TO-220AB  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
2
1
M30xxS  
• Solder bath temperature 275 °C maximum, 10 s per  
JESD22-B106 (for TO-220AB and TO-262AA package)  
PIN 1  
PIN 3  
PIN 2  
CASE  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TO-263AB  
TO-262AA  
K
TYPICAL APPLICATIONS  
K
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, and polarity protection application.  
A
3
NC  
MB30xxS  
MECHANICAL DATA  
Case: TO-220AB, TO-263AB, and TO-262AA  
2
1
MI30xxS  
NC  
A
PIN 1  
K
PIN 2  
K
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
HEATSINK  
PIN 3  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
30 A  
VRRM  
35 V, 45 V  
200 A  
Polarity: As marked  
IFSM  
Mounting Torque: 10 in-lbs maximum  
VF at IF = 30 A  
TJ max.  
0.61 V  
150 °C  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
M(B,I)3035S  
M(B,I)3045S  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig.1)  
35  
45  
V
A
30  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
200  
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz  
IRRM  
dV/dt  
TJ  
2.0  
Voltage rate of change (rated VR)  
10 000  
V/μs  
°C  
- 65 to + 150  
- 65 to + 175  
Operating junction and storage temperature range  
TSTG  
Revision: 15-Oct-12  
Document Number: 88952  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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