SPECIFICATION FOR RoHS 6 COMPLIANT HCMOS SMT VCXO OSCILLATOR
MtronPTI P/N: M3006S235
Electrical Specifications:
Parameter
Technology
Frequency of Operation
Frequency Tolerance
Symbol
Min.
Typ.
Fundamental
38.880000
Max.
Units
Conditions
FO
FT
MHz
ppm
-20
-30
+20
+30
@+25, VC = +1.65 V
Inclusive of initial tolerance,
deviation over temperature,
shock, vibration and voltage
Frequency Stability
ppm
F/FO
Operating Temperature
Storage Temperature
TA
TS
-40
-55
-3
-1
2.97
+85
+125
+3
+1
3.63
20
°C
°C
ppm
ppm
V
1st year
Thereafter (per year)
Aging
Operating Voltage
Operating Current
Output Type
VDD
IDD
3.3
HCMOS Compatible
50
mA
Output Load
15
55
pF
%
V
V
ns
ppm
V
kHz
%
Symmetry (duty cycle)
Logic “1” Level
Logic “0” Level
Rise/Fall Time
Pullability
Control Voltage Range
Modulation Bandwidth
Linearity
TDC
VOH
VOL
TR/TF
APR
VC
45
90% VDD
@ 50% of VDD
HCMOS load
HCMOS load
10% VDD
5
From 20% to 80%
±50
0.3
10
1.65
3.0
-3 dB
20
Positive monotonic slope
Input Impedance
Input Leakage
10
1
MΩ
µA
80% VDD
or N/C
Tri-state Enable Logic
V
Pad 2
Tri-state Disable Logic
Start-up Time
20% VDD
10
V
ms
Pad 2. Output to high-Z
TSU
4
Environmental Conditions:
Mechanical Shock
Vibration
Thermal Cycle
Hermeticity
Solderability
Per MIL-STD-202, Method 213, Condition C (100 g’s, 6 ms duration, ½ sinewave)
Per MIL-STD-202, Method 201 & 204 (10 g’s from 10-2000 Hz)
Per MIL-STD-883, Method 1010, B (-55°C to 125°C, 15 min. dwell, 10 cycles)
Per MIL-STD-202, Method 112 (1 x 10-8 atm cc/s of Helium)
Per EIAJ-STD-002
Max. Soldering Conditions
Package Type
Termination (Pad) Material
See solder profile, Figure 1
5.0 x 7.0 x 1.9 mm, 6 Pad Ceramic Leadless Chip Carrier (MV3 type)
10 to 15 µm of tungsten (W), 1.29 to 8.89 µm of nickel (Ni), 0.3 to 1.0 µm of gold (Au)
1 of 2
The information contained herein is proprietary to MtronPTI and is submitted in confidence.
This information may not be copied or divulged without written permission from MtronPTI.
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