Datasheet > M3

M3

更新时间： 2024-09-19 14:53:11

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	146K
描述
Rectifier device Common rectifier diodes

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数据手册

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M3 数据手册

M1 - M7

SURFACE MOUNT SILICON RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

Diffused junction

For surface mounted applications

Low reverse leakage current

Low forward voltage drop

Highcurrent capability

! Plastic material has UL flammability

classification94V-0

SMA(DO-214AC)

Dim

MinMax

Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

100

200

140

200

600

420

600

800

560

800

1000

700

Unit

Characteristic

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

400

280

400

Maximum DC Blocking Voltage

Maximum Average Forward

100

1000

I(AV)

1.0

Rectified Current

@TL=100 ℃

Peak Forward Surge Current

IFSM

8.3ms Single Half Sine-Wave

Super Imposed On Rated Load (JEDEC Method)

1.1

Maximum Forward Voltage at 1.0A DC

5.0

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@TJ=25℃

100

@TJ=100℃

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Operating Temperature Range

Storage Temperature Range

R JC

℃/W

℃

-55 to +125

TSTG

℃

NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

2.Thermal resistance junction to lead.

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