Datasheet > M29W800FT70N3F

M29W800FT70N3F

更新时间： 2024-10-02 15:18:07

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
57页	1170K
描述
4Mb (512Kb x8 or 256Kb x16); 8Mb (1Mb x8 or 512Kb x16), Boot Block, Parallel NOR Flash Memory

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数据手册

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M29W800FT70N3F 数据手册

M29W800FT M29W400FT

M29W800FB M29W400FB

8-Mbit (1 Mbit×8 / 512 Kbit×16); 4-Mbit (512 Kbit×8 / 256 Kbit×16)

Boot Block 3 V Supply Flash memory

Features

Supply voltage

– V = 2.7 V to 3.6 V for program, erase and

read

Access time: 55 ns, 70 ns

TSOP48 (N)

12 × 20 mm

Programming time

– 10 µs per byte/word typical

19 memory blocks (M29W800F)

– 1 boot block (top or bottom location)

– 3 parameter blocks

FBGA

– 15 main blocks

11 memory blocks (M29W400F)

– 1 boot block (top or bottom location)

– 3 parameter blocks

TFBGA48 (ZA)

6 x 8 mm

– 7 main blocks

Automotive device grade 3: Automotive device

grade

Program/erase controller

– Embedded byte/word program algorithms

Erase suspend and resume modes

– Read and program another block during

erase suspend

Unlock bypass program command

– Faster production/batch programming

Temporary block unprotection mode

Common Flash interface

– 64-bit security code

Low power consumption

– Standby and automatic standby

100,000 program/erase cycles per block

Electronic signature

– Manufacturer code: 0020h

– Top device code M29W800FT: 22D7h;

M29W400FT: 00EEh

– Bottom device code M29W800FB: 225Bh;

M29W400FB: 00EFh

RoHS packages available

July 2010

Rev 5

1/56

www.numonyx.com

12 3 4 5 6 7...57

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