Datasheet > M29W800DT70M1T

M29W800DT70M1T

更新时间： 2024-09-30 05:23:27

品牌	Logo	应用领域
恒忆 - NUMONYX		/
页数	文件大小	规格书
52页	1105K
描述
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

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数据手册

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M29W800DT70M1T 数据手册

M29W800DT

M29W800DB

8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)

3 V supply flash memory

Features

■ Supply voltage

– V = 2.7 V to 3.6 V for program, erase and

read

■ Access times: 45, 70, 90 ns

■ Programming time

– 10 µs per byte/word typical

SO44 (M)

■ 19 memory blocks

– 1 boot block (top or bottom location)

– 2 parameter and 16 main blocks

■ Program/erase controller

– Embedded byte/word program algorithms

■ Erase suspend and resume modes

TSOP48 (N)

12 x 20 mm

– Read and program another block during

erase suspend

■ Unlock bypass program command

FBGA

– Faster production/batch programming

■ Temporary block unprotection mode

TFBGA48 (ZE)

6 x 8 mm

■ Common flash interface

– 64-bit security code

■ Low power consumption

– Standby and automatic standby

■ 100,000 program/erase cycles per block

■ Electronic signature

– Manufacturer code: 0020h

– Top device code M29W800DT: 22D7h

– Bottom device code M29W800DB: 225Bh

March 2008

Rev 10

1/52

www.numonyx.com

12 3 4 5 6 7...52

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