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M29W800DB70N6T PDF预览

M29W800DB70N6T

更新时间: 2024-11-10 22:56:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路光电二极管
页数 文件大小 规格书
41页 220K
描述
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory

M29W800DB70N6T 数据手册

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M29W800DT  
M29W800DB  
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V for Program, Erase and  
CC  
Read  
ACCESS TIME: 70, 90ns  
PROGRAMMING TIME  
– 10µs per Byte/Word typical  
19 MEMORY BLOCKS  
SO44 (M)  
– 1 Boot Block (Top or Bottom Location)  
– 2 Parameter and 16 Main Blocks  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte/Word Program algorithms  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
TSOP48 (N)  
12 x 20mm  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
FBGA  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
TFBGA48 (ZA)  
8 x 6 ball array  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code M29W800DT: 22D7h  
– Bottom Device Code M29W800DB: 225Bh  
April 2002  
1/41  

M29W800DB70N6T 替代型号

型号 品牌 替代类型 描述 数据表
S29AL008J70TFI010 CYPRESS

功能相似

Flash, 512KX16, 70ns, PDSO48, TSOP-48
S29AL008D70TFI020 SPANSION

功能相似

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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