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M29W800AB90N5T PDF预览

M29W800AB90N5T

更新时间: 2024-01-04 15:05:38
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
33页 235K
描述
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

M29W800AB90N5T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.33最长访问时间:90 ns
其他特性:20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM数据保留时间-最小值:20
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-20 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29W800AB90N5T 数据手册

 浏览型号M29W800AB90N5T的Datasheet PDF文件第2页浏览型号M29W800AB90N5T的Datasheet PDF文件第3页浏览型号M29W800AB90N5T的Datasheet PDF文件第4页浏览型号M29W800AB90N5T的Datasheet PDF文件第5页浏览型号M29W800AB90N5T的Datasheet PDF文件第6页浏览型号M29W800AB90N5T的Datasheet PDF文件第7页 
M29W800AT  
M29W800AB  
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
2.7V to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 80ns  
44  
PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte or Word-by-Word  
– Status Register bits and Ready/Busy Output  
SECURITY PROTECTION MEMORY AREA  
INSTRUCTION ADDRESS CODING: 3 digits  
MEMORY BLOCKS  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
FBGA  
– Boot Block (Top or Bottom location)  
– Parameter and Main blocks  
LFBGA48 (ZA)  
8 x 6 solder balls  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
LOW POWER CONSUMPTION  
V
CC  
– Stand-by and Automatic Stand-by  
100,000 PROGRAM/ERASE CYCLES per  
19  
15  
BLOCK  
A0-A18  
DQ0-DQ14  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
W
E
DQ15A–1  
BYTE  
RB  
ELECTRONIC SIGNATURE  
M29W800AT  
M29W800AB  
– Manufacturer Code: 20h  
G
– Top Device Code, M29W800AT: D7h  
– Bottom Device Code, M29W800AB: 5Bh  
RP  
V
SS  
AI02599  
March 2000  
1/33  

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