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M29W800AB90N5 PDF预览

M29W800AB90N5

更新时间: 2023-05-15 00:00:00
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管
页数 文件大小 规格书
40页 720K
描述
Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M29W800AB90N5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.33最长访问时间:90 ns
其他特性:20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM数据保留时间-最小值:20
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-20 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29W800AB90N5 数据手册

 浏览型号M29W800AB90N5的Datasheet PDF文件第2页浏览型号M29W800AB90N5的Datasheet PDF文件第3页浏览型号M29W800AB90N5的Datasheet PDF文件第4页浏览型号M29W800AB90N5的Datasheet PDF文件第5页浏览型号M29W800AB90N5的Datasheet PDF文件第6页浏览型号M29W800AB90N5的Datasheet PDF文件第7页 
M29W800AT  
M29W800AB  
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
FEATURES SUMMARY  
2.7V to 3.6V SUPPLY VOLTAGE for  
Figure 1. Packages  
PROGRAM, ERASE and READ  
OPERATIONS  
ACCESS TIME: 80ns  
PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
FBGA  
Program Byte-by-Byte or Word-by-Word  
Status Register bits and Ready/Busy  
Output  
TFBGA48 (ZA)  
8 x 6 solder balls  
TSOP48 (N)  
12 x 20mm  
SECURITY PROTECTION MEMORY AREA  
INSTRUCTION ADDRESS CODING: 3 digits  
MEMORY BLOCKS  
Boot Block (Top or Bottom location)  
Parameter and Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
SO44 (M)  
LOW POWER CONSUMPTION  
Stand-by and Automatic Stand-by  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
Figure 2. Logic Diagram  
V
CC  
Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
19  
15  
Manufacturer Code: 20h  
Top Device Code, M29W800AT: D7h  
Bottom Device Code, M29W800AB: 5Bh  
A0-A18  
DQ0-DQ14  
W
E
DQ15A–1  
BYTE  
RB  
M29W800AT  
M29W800AB  
G
RP  
V
SS  
AI02599  
March 2004  
1/40  

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