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M29W800AB120N1T PDF预览

M29W800AB120N1T

更新时间: 2024-11-30 22:26:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
33页 235K
描述
8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

M29W800AB120N1T 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:TSOP包装说明:TSOP1, TSSOP48,.8,20
针数:48Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.25Is Samacsys:N
最长访问时间:120 ns其他特性:20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES数据轮询:YES
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,15
端子数量:48字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29W800AB120N1T 数据手册

 浏览型号M29W800AB120N1T的Datasheet PDF文件第2页浏览型号M29W800AB120N1T的Datasheet PDF文件第3页浏览型号M29W800AB120N1T的Datasheet PDF文件第4页浏览型号M29W800AB120N1T的Datasheet PDF文件第5页浏览型号M29W800AB120N1T的Datasheet PDF文件第6页浏览型号M29W800AB120N1T的Datasheet PDF文件第7页 
M29W800AT  
M29W800AB  
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
2.7V to 3.6V SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 80ns  
44  
PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte or Word-by-Word  
– Status Register bits and Ready/Busy Output  
SECURITY PROTECTION MEMORY AREA  
INSTRUCTION ADDRESS CODING: 3 digits  
MEMORY BLOCKS  
1
TSOP48 (N)  
12 x 20mm  
SO44 (M)  
FBGA  
– Boot Block (Top or Bottom location)  
– Parameter and Main blocks  
LFBGA48 (ZA)  
8 x 6 solder balls  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
Figure 1. Logic Diagram  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
LOW POWER CONSUMPTION  
V
CC  
– Stand-by and Automatic Stand-by  
100,000 PROGRAM/ERASE CYCLES per  
19  
15  
BLOCK  
A0-A18  
DQ0-DQ14  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
W
E
DQ15A–1  
BYTE  
RB  
ELECTRONIC SIGNATURE  
M29W800AT  
M29W800AB  
– Manufacturer Code: 20h  
G
– Top Device Code, M29W800AT: D7h  
– Bottom Device Code, M29W800AB: 5Bh  
RP  
V
SS  
AI02599  
March 2000  
1/33  

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