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M29W800AB100M5 PDF预览

M29W800AB100M5

更新时间: 2024-12-01 09:45:03
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
40页 720K
描述
Flash, 512KX16, 100ns, PDSO44, 0.525 INCH, PLASTIC, SO-44

M29W800AB100M5 数据手册

 浏览型号M29W800AB100M5的Datasheet PDF文件第2页浏览型号M29W800AB100M5的Datasheet PDF文件第3页浏览型号M29W800AB100M5的Datasheet PDF文件第4页浏览型号M29W800AB100M5的Datasheet PDF文件第5页浏览型号M29W800AB100M5的Datasheet PDF文件第6页浏览型号M29W800AB100M5的Datasheet PDF文件第7页 
M29W800AT  
M29W800AB  
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)  
Low Voltage Single Supply Flash Memory  
FEATURES SUMMARY  
2.7V to 3.6V SUPPLY VOLTAGE for  
Figure 1. Packages  
PROGRAM, ERASE and READ  
OPERATIONS  
ACCESS TIME: 80ns  
PROGRAMMING TIME: 10µs typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
FBGA  
Program Byte-by-Byte or Word-by-Word  
Status Register bits and Ready/Busy  
Output  
TFBGA48 (ZA)  
8 x 6 solder balls  
TSOP48 (N)  
12 x 20mm  
SECURITY PROTECTION MEMORY AREA  
INSTRUCTION ADDRESS CODING: 3 digits  
MEMORY BLOCKS  
Boot Block (Top or Bottom location)  
Parameter and Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
SO44 (M)  
LOW POWER CONSUMPTION  
Stand-by and Automatic Stand-by  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
Figure 2. Logic Diagram  
V
CC  
Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
19  
15  
Manufacturer Code: 20h  
Top Device Code, M29W800AT: D7h  
Bottom Device Code, M29W800AB: 5Bh  
A0-A18  
DQ0-DQ14  
W
E
DQ15A–1  
BYTE  
RB  
M29W800AT  
M29W800AB  
G
RP  
V
SS  
AI02599  
March 2004  
1/40  

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