是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | TFBGA, |
针数: | 63 | Reach Compliance Code: | not_compliant |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.42 | 最长访问时间: | 70 ns |
JESD-30 代码: | R-PBGA-B63 | JESD-609代码: | e0 |
长度: | 11 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 63 |
字数: | 4194304 words | 字数代码: | 4000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 4MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
编程电压: | 3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn63Pb37) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
类型: | NOR TYPE | 宽度: | 7 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M29W641DU70ZA1E | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | |
M29W641DU70ZA1F | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | |
M29W641DU70ZA1T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | |
M29W641DU70ZA6 | NUMONYX |
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暂无描述 | |
M29W641DU70ZA6E | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | |
M29W641DU70ZA6F | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | |
M29W641DU70ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | |
M29W641DU90N1E | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | |
M29W641DU90N1F | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory | |
M29W641DU90N1T | STMICROELECTRONICS |
获取价格 |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |