Datasheet > 存储 > 闪存> M29W640GL60NA6F

M29W640GL60NA6F

更新时间： 2024-11-19 05:11:03

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存内存集成电路光电二极管
页数	文件大小	规格书
90页	1676K
描述
64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory

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中文翻译

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数据手册

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M29W640GL60NA6F 数据手册

M29W640GH M29W640GL

M29W640GT M29W640GB

64 Mbit (8Mb x8 or 4Mb x16, Page)

3V supply Flash memory

Feature

FBGA

■ Supply Voltage

– V = 2.7 to 3.6 V for Program/Erase/Read

– V =12 V for Fast Program (optional)

TSOP48 (NA)

12 x 20mm

TFBGA48 (ZA)

6 x 8mm

■ Asynchronous Random/Page Read

– Page Width: 4 words

– Page Access: 25 ns

– Random Access: 60 ns, 70 ns, 90 ns

FBGA

■ Fast Program commands

– 2 word/4 byte Program (without V =12 V)

TBGA64 (ZF)

10 x 13mm(1)

TSOP56 (NB)

– 4 word/8 byte Program (with V =12 V)

)

14 x 20mm(1

– 16 word/32 byte Write Buffer

1. Packages only available upon request.

■ Programming time

– 10 µs per byte/word typical

– Chip Program time: 10 s (4-word Program)

■ 128 word Extended Memory block

– Extra block used as security block or to

store additional information

■ Memory organization

– M29W640GH/L:

■ Low power consumption:Standby and

128 main blocks, 64 Kbytes each

Automatic Standby

– M29W640GT/B

■ Unlock Bypass Program command

Eight 8 Kbytes Boot blocks (top or bottom)

127 Main blocks, 64 Kbytes each

– Faster Production/Batch Programming

■ Program/Erase controller

■ Common Flash Interface: 64-bit Security Code

– Embedded byte/word program algorithms

■ V /WP pin for Fast Program and Write Protect

■ Program/Erase Suspend and Resume

■ Temporary Block Unprotection mode

■ 100,000 Program/Erase cycles per block

– Read from any block during Program

Suspend

– Read and Program another block during

Erase Suspend

■ Electronic Signature

– Manufacturer Code: 0020h

– Device code (see Table 1)

■ ECOPACK packages

Table 1.

Device summary

Root Part Number

Device code

M29W640GH: Uniform, last block protected by V_PP/WP

M29W640GL: Uniform, first block protected by V_PP/WP

M29W640GT: Top Boot Blocks

227Eh + 220Ch + 2201h

227Eh + 220Ch + 2200h

227Eh + 2210h + 2201h

227Eh + 2210h + 2200h

M29W640GB: Bottom Boot Blocks

March 2008

Rev 5

1/90

www.numonyx.com

12 3 4 5 6 7...90

中文翻译

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与M29W640GL60NA6F相关器件

型号	品牌	获取价格	描述	数据表
M29W640GL60NB6E	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GL60NB6F	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GL60ZA6E	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GL60ZA6E	STMICROELECTRONICS	获取价格	4MX16 FLASH 3V PROM, 60ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48
M29W640GL60ZA6F	STMICROELECTRONICS	获取价格	4MX16 FLASH 3V PROM, 60ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48
M29W640GL60ZA6F	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GL60ZF6E	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GL60ZF6F	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GL60ZF6F	STMICROELECTRONICS	获取价格	4MX16 FLASH 3V PROM, 60ns, PBGA64, 10 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, TBGA-64
M29W640GL70NA6E	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory

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