M29W640GH70ZF6F

更新时间： 2024-11-23 02:53:07

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
90页	1676K
描述
64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

M29W640GH70ZF6F 数据手册

M29W640GH M29W640GL

M29W640GT M29W640GB

64 Mbit (8Mb x8 or 4Mb x16, Page)

3V supply Flash memory

Feature

FBGA

■ Supply Voltage

– V = 2.7 to 3.6 V for Program/Erase/Read

– V =12 V for Fast Program (optional)

TSOP48 (NA)

12 x 20mm

TFBGA48 (ZA)

6 x 8mm

■ Asynchronous Random/Page Read

– Page Width: 4 words

– Page Access: 25 ns

– Random Access: 60 ns, 70 ns, 90 ns

FBGA

■ Fast Program commands

– 2 word/4 byte Program (without V =12 V)

TBGA64 (ZF)

10 x 13mm(1)

TSOP56 (NB)

– 4 word/8 byte Program (with V =12 V)

)

14 x 20mm(1

– 16 word/32 byte Write Buffer

1. Packages only available upon request.

■ Programming time

– 10 µs per byte/word typical

– Chip Program time: 10 s (4-word Program)

■ 128 word Extended Memory block

– Extra block used as security block or to

store additional information

■ Memory organization

– M29W640GH/L:

■ Low power consumption:Standby and

128 main blocks, 64 Kbytes each

Automatic Standby

– M29W640GT/B

■ Unlock Bypass Program command

Eight 8 Kbytes Boot blocks (top or bottom)

127 Main blocks, 64 Kbytes each

– Faster Production/Batch Programming

■ Program/Erase controller

■ Common Flash Interface: 64-bit Security Code

– Embedded byte/word program algorithms

■ V /WP pin for Fast Program and Write Protect

■ Program/Erase Suspend and Resume

■ Temporary Block Unprotection mode

■ 100,000 Program/Erase cycles per block

– Read from any block during Program

Suspend

– Read and Program another block during

Erase Suspend

■ Electronic Signature

– Manufacturer Code: 0020h

– Device code (see Table 1)

■ ECOPACK packages

Table 1.

Device summary

Root Part Number

Device code

M29W640GH: Uniform, last block protected by V_PP/WP

M29W640GL: Uniform, first block protected by V_PP/WP

M29W640GT: Top Boot Blocks

227Eh + 220Ch + 2201h

227Eh + 220Ch + 2200h

227Eh + 2210h + 2201h

227Eh + 2210h + 2200h

M29W640GB: Bottom Boot Blocks

March 2008

Rev 5

1/90

www.numonyx.com

12 3 4 5 6 7...90

中文翻译

下载PDF

与M29W640GH70ZF6F相关器件

型号	品牌	获取价格	描述	数据表
M29W640GH70ZS6E	MICRON	获取价格	64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory
M29W640GH70ZS6F	MICRON	获取价格	64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory
M29W640GH7ANB6E	MICRON	获取价格	64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory
M29W640GH90NA6E	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GH90NA6F	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GH90NB6E	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GH90NB6F	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GH90ZA6E	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GH90ZA6F	NUMONYX	获取价格	64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GH90ZA6F	STMICROELECTRONICS	获取价格	4MX16 FLASH 3V PROM, 90ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48

与M29W640GH70ZF6F相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

27
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

55
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

M29W640GH70ZF6F

M29W640GH70ZF6F 数据手册

与M29W640GH70ZF6F相关器件

与M29W640GH70ZF6F相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

M29W640GH70ZF6F

M29W640GH70ZF6F 数据手册

与M29W640GH70ZF6F相关器件

与M29W640GH70ZF6F相关文章

您还可以找

您在本页遇到什么问题？