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M29W640GB70N3E

更新时间： 2024-11-20 15:17:27
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
74页 966K
描述
64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory

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M29W640GB70N3E 数据手册

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64Mb: 3V Embedded Parallel NOR Flash  
Features  
Parallel NOR Flash Embedded Memory  
M29W640GH, M29W640GL  
M29W640GT, M29W640GB  
• Common Flash interface  
– 64-bit security code  
Features  
• Supply voltage  
– VCC = 2.7–3.6V (program, erase, read)  
– VPP = 12V for fast program (optional)  
• Asynchronous random/page read  
– Page width: 4 words  
– Page access: 25ns  
– Random access: 60ns, 70ns, 90ns  
• Fast program commands  
• 128-word extended memory block  
– Extra block used as security block or to store ad-  
ditional information  
• Low power consumption: Standby and automatic  
mode  
• 100,000 PROGRAM/ERASE cycles per block  
• Electronic signature  
– Manufacturer code: 0020h  
– 2-word/4-byte program (without VPP = 12V)  
– 4-word/8-byte program (with VPP = 12V)  
– 16-word/32-byte write buffer  
• Programming time  
• Device summary: part number and device code  
– M29W640GH: uniform, last block protected by  
VPP/WP#  
– 227Eh + 220Ch + 2201h  
– M29W640GL: uniform, first block protected by  
VPP/WP#  
– 227Eh + 220Ch + 2200h  
– M29W640GT: top boot block  
– 227Eh + 2210h + 2201h  
– M29W640GB: bottom boot block  
– 227Eh + 2210h + 2200h  
• RoHS-compliant packages  
– 10µs per byte/word TYP  
– Chip program time: 10 s (4-word program)  
– Double word/quadruple byte program  
• Memory organization  
– M29W640GH/L 128 main blocks, 64KB each  
– M29W640GT/B 127 main blocks, 64KB each and  
8 boot blocks, 8KB each  
• Program/erase controller  
– Embedded byte/word program algorithms  
• Program/erase suspend and resume  
– Read from any block during a PROGRAM SUS-  
PEND operation  
– Read or program another block during an ERASE  
SUSPEND operation  
– 48-pin TSOP (N/NA) 12mm x 20mm  
– 56-pin TSOP (NB) 14mm x 20mm  
– 48-ball TFBGA (ZA) 6mm x 8mm  
– 64-ball FBGA (ZS) 11mm x 13mm  
– 64-ball TBGA (ZF) 10mm x 13mm  
• Automotive certified parts available  
• Hardware block protection  
– VPP/WP# pin for fast program and write protect  
– Temporary block unprotect mode  
Part Numbering Information  
Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory  
content bits erased to 1. For available options, such as packages or speed, or for further information, contact your  
Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification compari-  
son by device type is available at www.micron.com/products. Contact the factory for devices not found.  
Table 1: Part Number Information  
Part Number  
Category  
Category Details  
Device Type  
M29 = Parallel Flash memory  
PDF: 09005aef84e35115  
m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2013 Micron Technology, Inc. All rights reserved.  
1
Products and specifications discussed herein are subject to change by Micron without notice.  
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与M29W640GB70N3E相关器件

型号 品牌 获取价格 描述 数据表
M29W640GB70N3F MICRON

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 		64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory
M29W640GB70NA6E NUMONYX

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 		64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GB70NA6E MICRON

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 		64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory
M29W640GB70NA6F NUMONYX

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 		64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GB70NA6F MICRON

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 		64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory
M29W640GB70NB6E NUMONYX

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 		64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GB70NB6E MICRON

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 		64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory
M29W640GB70NB6F STMICROELECTRONICS

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 		4MX16 FLASH 3V PROM, 70ns, PDSO56, 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-56
M29W640GB70NB6F NUMONYX

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 		64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
M29W640GB70ZA3E MICRON

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 		64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory

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