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M29W640FT PDF预览

M29W640FT

更新时间: 2024-11-19 05:11:03
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存
页数 文件大小 规格书
71页 1409K
描述
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

M29W640FT 数据手册

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M29W640FT  
M29W640FB  
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)  
3V Supply Flash Memory  
Feature summary  
Supply voltage  
– V = 2.7V to 3.6V for Program, Erase,  
CC  
Read  
– V =12 V for Fast Program (optional)  
PP  
Asynchronous Random/Page Read  
– Page Width: 4 Words  
– Page Access: 25ns  
– Random Access: 60ns, 70ns  
TSOP48 (N)  
12 x 20mm  
Programming time  
– 10µs per Byte/Word typical  
– 4 Words / 8 Bytes Program  
135 Memory Blocks  
FBGA  
– 1 Boot Block and 7 Parameter Blocks,  
8 KBytes each (Top or Bottom location)  
– 127 Main Blocks, 64 KBytes each  
TFBGA48 (ZA)  
6x8mm  
Program/Erase Controller  
– Embedded Byte/Word Program algorithms  
Program/Erase Suspend and Resume  
– Read from any Block during Program  
Suspend  
– Read and Program another Block during  
Erase Suspend  
Extended Memory Block  
Extra block used as security block or to store  
additional information  
Low power consumption  
Unlock Bypass Program command  
– Standby and Automatic Standby  
– Faster Production/Batch Programming  
100,000 Program/Erase cycles per block  
V /WP pin for Fast Program and Write Protect  
PP  
Electronic Signature  
Temporary Block Unprotection mode  
– Manufacturer Code: 0020h  
Common Flash Interface  
®
ECOPACK packages  
– 64-bit Security Code  
Table 1.  
Device Codes  
Root Part Number  
Device Code  
M29W640FT  
M29W640FB  
22EDh  
22FDh  
December 2007  
Rev 7  
1/71  
www.numonyx.com  
1

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