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M29W640FB60N6F PDF预览

M29W640FB60N6F

更新时间: 2024-01-12 04:14:33
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存
页数 文件大小 规格书
71页 1409K
描述
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

M29W640FB60N6F 技术参数

生命周期:Transferred零件包装代码:TSOP
包装说明:TSOP1, TSSOP48,.8,20针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.47
最长访问时间:60 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e3/e6长度:18.4 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,127端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE页面大小:4/8 words
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN/TIN BISMUTH
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29W640FB60N6F 数据手册

 浏览型号M29W640FB60N6F的Datasheet PDF文件第2页浏览型号M29W640FB60N6F的Datasheet PDF文件第3页浏览型号M29W640FB60N6F的Datasheet PDF文件第4页浏览型号M29W640FB60N6F的Datasheet PDF文件第5页浏览型号M29W640FB60N6F的Datasheet PDF文件第6页浏览型号M29W640FB60N6F的Datasheet PDF文件第7页 
M29W640FT  
M29W640FB  
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)  
3V Supply Flash Memory  
Feature summary  
Supply voltage  
– V = 2.7V to 3.6V for Program, Erase,  
CC  
Read  
– V =12 V for Fast Program (optional)  
PP  
Asynchronous Random/Page Read  
– Page Width: 4 Words  
– Page Access: 25ns  
– Random Access: 60ns, 70ns  
TSOP48 (N)  
12 x 20mm  
Programming time  
– 10µs per Byte/Word typical  
– 4 Words / 8 Bytes Program  
135 Memory Blocks  
FBGA  
– 1 Boot Block and 7 Parameter Blocks,  
8 KBytes each (Top or Bottom location)  
– 127 Main Blocks, 64 KBytes each  
TFBGA48 (ZA)  
6x8mm  
Program/Erase Controller  
– Embedded Byte/Word Program algorithms  
Program/Erase Suspend and Resume  
– Read from any Block during Program  
Suspend  
– Read and Program another Block during  
Erase Suspend  
Extended Memory Block  
Extra block used as security block or to store  
additional information  
Low power consumption  
Unlock Bypass Program command  
– Standby and Automatic Standby  
– Faster Production/Batch Programming  
100,000 Program/Erase cycles per block  
V /WP pin for Fast Program and Write Protect  
PP  
Electronic Signature  
Temporary Block Unprotection mode  
– Manufacturer Code: 0020h  
Common Flash Interface  
®
ECOPACK packages  
– 64-bit Security Code  
Table 1.  
Device Codes  
Root Part Number  
Device Code  
M29W640FT  
M29W640FB  
22EDh  
22FDh  
December 2007  
Rev 7  
1/71  
www.numonyx.com  
1

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