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M29W640FB60N6F PDF预览

M29W640FB60N6F

更新时间: 2024-02-15 16:21:13
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储
页数 文件大小 规格书
72页 476K
描述
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

M29W640FB60N6F 技术参数

生命周期:Transferred零件包装代码:TSOP
包装说明:TSOP1, TSSOP48,.8,20针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.47
最长访问时间:60 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e3/e6长度:18.4 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,127端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE页面大小:4/8 words
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN/TIN BISMUTH
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29W640FB60N6F 数据手册

 浏览型号M29W640FB60N6F的Datasheet PDF文件第2页浏览型号M29W640FB60N6F的Datasheet PDF文件第3页浏览型号M29W640FB60N6F的Datasheet PDF文件第4页浏览型号M29W640FB60N6F的Datasheet PDF文件第5页浏览型号M29W640FB60N6F的Datasheet PDF文件第6页浏览型号M29W640FB60N6F的Datasheet PDF文件第7页 
M29W640FT  
M29W640FB  
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)  
3V Supply Flash Memory  
Figure 1. Packages  
Features summary  
Supply Voltage  
VCC = 2.7V to 3.6V for Program, Erase,  
Read  
VPP =12 V for Fast Program (optional)  
Asynchronous Random/Page Read  
Page Width: 4 Words  
TSOP48 (N)  
12 x 20mm  
Page Access: 25ns  
Random Access: 60ns, 70ns  
Programming Time  
FBGA  
10 µs per Byte/Word typical  
4 Words/8 Bytes Program  
135 memory blocks  
TFBGA48 (ZA)  
6x8mm  
1 Boot Block and 7 Parameter Blocks,  
8 KBytes each (Top or Bottom Location)  
127 Main Blocks, 64 KBytes each  
Program/Erase Controller  
Electronic Signature  
Manufacturer Code: 0020h  
Embedded Byte/Word Program algorithms  
Program/Erase Suspend and Resume  
Table 1.  
Device Codes  
Read from any Block during Program  
Root Part Number  
Device Code  
Suspend  
Read and Program another Block during  
M29W640FT  
M29W640FB  
22EDh  
22FDh  
Erase Suspend  
Unlock Bypass Program command  
Faster Production/Batch Programming  
ECOPACK® packages  
VPP/WP pin for Fast Program and Write Protect  
Temporary Block Unprotection mode  
Common Flash Interface  
64-bit Security Code  
Extended Memory Block  
Extra block used as security block or to  
store additional information  
Low power consumption  
Standby and Automatic Standby  
100,000 Program/Erase cycles per block  
Rev3  
1/72  
December 2005  
www.st.com  
1

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